- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄48375 > APTM10DHM05 278 A, 100 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | APTM10DHM05 |
| 元件分類： | JFETs |
| 英文描述： | 278 A, 100 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-8 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 302K |
| 代理商： | APTM10DHM05 |
APTM10DHM05
A
P
T
M
10D
H
M
05–
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
1 - 6
G1
S1
S4
G4
CR3
VBUS
OUT2
0/VBUS
Q4
OUT1
CR2
Q1
-
S4
G4
VBUS
0/VBUS
S1
G1
OUT1
OUT2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
100
V
Tc = 25°C
278
ID
Continuous Drain Current
Tc = 80°C
207
IDM
Pulsed Drain current
1100
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
5
m
PD
Maximum Power Dissipation
Tc = 25°C
780
W
IAR
Avalanche current (repetitive and non repetitive)
100
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 100V
RDSon = 4.5m typ @ Tj = 25°C
ID = 278A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS V MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Asymmetrical - Bridge
MOSFET Power Module
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTM120A80FT1G | 14 A, 1200 V, 0.96 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM120DU29T | 34 A, 1200 V, 0.29 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM120DU29T | 34 A, 1200 V, 0.29 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DAM10T | 175 A, 200 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DAM10T | 175 A, 200 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTM10DHM05G | 功能描述:MOSFET MOD ASYMMETRIC BRIDGE SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM10DHM09T | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Asymmetrical - Bridge MOSFET Power Module |
| APTM10DHM09T3G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - MOSFET - Bulk |
| APTM10DHM09TG | 功能描述:MOSFET MOD ASYMMETRIC BRIDGE SP4 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM10DSKM09T3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Dual Buck chopper MOSFET Power Module |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。