- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51276 > APTM100H45FT3 (MICROSEMI POWER PRODUCTS GROUP) 18 A, 1000 V, 0.45 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | APTM100H45FT3 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 18 A, 1000 V, 0.45 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-25 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 320K |
| 代理商： | APTM100H45FT3 |
APTM100H45FT3
A
P
T
M
100H
45F
T
3–
R
ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
6 –
6
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
120
140
160
5
10152025
303540
ID, Drain Current (A)
t d(o
n
)a
nd
t
d(
off
)(n
s
)
VDS=667V
RG=5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
10
20
30
40
50
60
5
10
1520
25303540
ID, Drain Current (A)
t r
an
d
t
f(n
s)
VDS=667V
RG=5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
0.5
1
1.5
2
5
1015202530
35
40
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
er
g
y(
m
J)
VDS=667V
RG=5
TJ=125°C
L=100H
Eon
Eoff
0
0.5
1
1.5
2
2.5
0
5
10
15
20
25
30
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
er
g
y
(
m
J)
Switching Energy vs Gate Resistance
VDS=667V
ID=18A
TJ=125°C
L=100H
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
6
8
10
12
14
16
18
ID, Drain Current (A)
F
req
u
e
n
cy
(
k
H
z)
Operating Frequency vs Drain Current
VDS=667V
D=50%
RG=5
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.20.4 0.60.8
1
1.2 1.41.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
en
t(
A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
相關PDF資料 |
PDF描述 |
|---|---|
| APTM100H45STG | 18 A, 1000 V, 0.54 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100UM45F-ALN | 215 A, 1000 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM10TDUM09P | 139 A, 100 V, 0.009 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM10TDUM09P | 139 A, 100 V, 0.009 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM120A20S | 50 A, 1200 V, 0.2 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APTM100H45FT3G | 功能描述:MOSFET MODULE FULL BRIDGE SP3 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM100H45SCT | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full bridge Series & SiC parallel diodes MOSFET Power Module |
| APTM100H45SCTG | 功能描述:MOSFET 4N CH 1000V 18A SP4 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS 7® 標準包裝:10 系列:* |
| APTM100H45ST | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full bridge Series & parallel diodes MOSFET Power Module |
| APTM100H45STG | 功能描述:MOSFET FULL BRIDGE SER/PAR SP4 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
發(fā)布緊急采購，3分鐘左右您將得到回復。