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參數(shù)資料
| 型號(hào)： | APTM100H45FT3 |
| 元件分類： | JFETs |
| 英文描述： | 18 A, 1000 V, 0.45 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-25 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 320K |
| 代理商： | APTM100H45FT3 |
APTM100H45FT3
A
P
T
M
100H
45F
T
3–
R
ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
2 –
6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 250A
1000
V
VGS = 0V,VDS= 1000V
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS= 800V
Tj = 125°C
500
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 9A
450
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
4350
Coss
Output Capacitance
715
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
120
pF
Qg
Total gate Charge
154
Qgs
Gate – Source Charge
26
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 18A
97
nC
Td(on)
Turn-on Delay Time
10
Tr
Rise Time
12
Td(off)
Turn-off Delay Time
121
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 667V
ID = 18A
RG = 5
35
ns
Eon
Turn-on Switching Energy
639
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 667V
ID = 18A, RG = 5
380
J
Eon
Turn-on Switching Energy
1046
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 667V
ID = 18A, RG = 5
451
J
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
18
IS
Continuous Source current
(Body diode)
Tc = 80°C
14
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 18A
1.3
V
dv/dt
Peak Diode Recovery
18
V/ns
Tj = 25°C
340
trr
Reverse Recovery Time
IS = - 18A
VR = 250V
diS/dt = 100A/s
Tj = 125°C
640
ns
Tj = 25°C
1.78
Qrr
Reverse Recovery Charge
IS = - 18A
VR = 250V
diS/dt = 100A/s
Tj = 125°C
4.47
C
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 18A
di/dt
≤ 700A/s
VR ≤ VDSS
Tj ≤ 150°C
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