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參數(shù)資料
| 型號(hào)： | APTGT75X120BTP3 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 60 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-35 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 269K |
| 代理商： | APTGT75X120BTP3 |
APTGT75X120RTP3
APTGT75X120BTP3
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APT website – http://www.advancedpower.com
2 - 4
IGBT & Diode Brake (only for APTGT75X120BTP3) Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
60
IC
Continuous Collector Current
TC = 80°C
50
ICM
Pulsed Collector Current
TC = 25°C
100
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
200
W
IF
DC Forward Current
TC = 80°C
25
A
IGBT & Diode Inverter Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
105
IC
Continuous Collector Current
TC = 80°C
75
ICM
Pulsed Collector Current
TC = 25°C
150
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
350
W
RBSOA Reverse Bias Save Operating Area
Tj = 125°C
150A @ 1100V
IF
DC Forward Current
TC = 80°C
75
IFRM
Repetitive Peak Forward Current
tp = 1ms
150
A
2. Electrical Characteristics
Diodes Rectifier Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
IR
Reverse Current
VR = 1600V
Tj = 150°C
3
mA
VF
Forward Voltage
IF = 75A
Tj = 150°C
1.2
V
RthJC
Junction to Case
0.65
°C/W
IGBT Brake & Diode (only for APTGT75X120BTP3) Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
400
A
Tj = 25°C
1.4
1.7
2.1
VCE(on) Collector Emitter on Voltage
VGE = 15V
IC = 50A
Tj = 125°C
2.0
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 2mA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
600
nA
Cies
Input Capacitance
3600
Coes
Output Capacitance
188
Cres
Reverse Transfer Capacitance
VGE = 0V,
VCE = 25V
f = 1MHz
163
pF
Tj = 25°C
1.6
VF
Forward Voltage
VGE = 0V
IF = 25A
Tj = 125°C
1.8
V
IGBT
0.6
RthJC
Junction to Case
Diode
1.2
°C/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTGT75X120RTP3 | 105 A, 1200 V, N-CHANNEL IGBT |
| APTGT75X120RTP3 | 105 A, 1200 V, N-CHANNEL IGBT |
| APTGT75X120E3G | 100 A, 1200 V, N-CHANNEL IGBT |
| APTGT75X120E3 | 100 A, 1200 V, N-CHANNEL IGBT |
| APTGT75X120E3 | 100 A, 1200 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGT75X120BTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT75X120E3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge Trench IGBT Power Module |
| APTGT75X120E3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT75X120RTP3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module |
| APTGT75X120RTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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