參數(shù)資料
型號(hào): APTGT75H60T3G
廠商: Advanced Power Technology Ltd.
英文描述: Full - Bridge Trench + Field Stop IGBT Power Module
中文描述: 全-橋戴場(chǎng)站IGBT功率模塊
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 298K
代理商: APTGT75H60T3G
APTGT75H60T3G
A
APT website – http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 600V
V
GE
=15V
I
C
= 75A
V
GE
= V
CE
, I
C
= 600μA
V
GE
= 20V, V
CE
= 0V
250
1.9
6.5
600
μA
T
j
= 25°C
T
j
= 150°C
1.5
1.7
5.8
V
CE(sat)
Collector Emitter Saturation Voltage
V
V
GE(th)
I
GES
Gate Threshold Voltage
Gate – Emitter Leakage Current
5.0
V
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
C
ies
C
oes
C
res
T
d(on)
T
r
T
d(off)
T
f
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
4620
300
140
110
45
200
40
120
50
250
60
1.3
2.6
V
GE
= 0V
V
CE
= 25V
f = 1MHz
pF
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 75A
R
G
= 12
Inductive Switching (150°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 75A
R
G
= 12
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
Test Conditions
Min
600
Typ
75
1.6
1.5
125
220
3.6
7.6
Max
250
500
2
Unit
V
T
j
= 25°C
T
j
= 150°C
Tc = 80°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
I
RM
Maximum Reverse Leakage Current
V
R
=600V
μA
I
F
DC Forward current
I
F
= 75A
V
GE
= 0V
A
V
V
F
Diode Forward Voltage
t
rr
Reverse Recovery Time
ns
Q
rr
Reverse Recovery Charge
I
F
= 75A
V
R
= 300V
di/dt =2000A/μs
μC
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APTGT75SK120D1 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Buck chopper Trench IGBT Power Module
APTGT75SK120D1G 功能描述:IGBT 1200V 110A 357W D1 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時(shí)的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTGT75SK120T 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Buck chopper Fast Trench + Field Stop IGBT Power Module
APTGT75SK120T1G 功能描述:IGBT 1200V 110A 357W SP1 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時(shí)的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTGT75SK120TG 功能描述:IGBT 1200V 110A 357W SP4 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時(shí)的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B