參數(shù)資料
型號: APTGT50DA120TG
廠商: Advanced Power Technology Ltd.
英文描述: Boost chopper Fast Trench + Field Stop IGBT Power Module
中文描述: 升壓斬波器快速戴場站IGBT功率模塊
文件頁數(shù): 2/5頁
文件大?。?/td> 266K
代理商: APTGT50DA120TG
APTGT50DA120TG
A
www.microsemi.com
2 - 5
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
I
CES
Zero Gate Voltage Collector Current
Test Conditions
V
GE
= 0V, V
CE
= 1200V
V
GE
= 15V
I
C
= 50A
V
GE
= V
CE
, I
C
= 2mA
V
GE
= 20V, V
CE
= 0V
Min
5.0
Typ
1.7
2.0
5.8
Max
250
2.1
6.5
400
Unit
μA
T
j
= 25°C
T
j
= 125°C
V
CE(sat)
Collector Emitter Saturation Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 50A
R
G
= 18
Inductive Switching (125°C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 50A
R
G
= 18
V
GE
= 15V
V
Bus
= 600V
I
C
= 50A
R
G
= 18
Min
Typ
3600
190
160
90
30
420
70
90
50
520
90
Max
Unit
pF
ns
ns
E
on
Turn-on Switching Energy
T
j
= 125°C
5
E
off
Turn-off Switching Energy
T
j
= 125°C
5.5
mJ
Chopper diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
Test Conditions
Min
1200
Typ
50
1.4
1.3
150
250
4.5
9
2.1
4.2
Max
250
500
1.9
Unit
V
T
j
= 25°C
T
j
= 125°C
Tc = 80°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
RM
Maximum Reverse Leakage Current
V
R
=1200V
μA
I
F
DC Forward Current
A
V
F
Diode Forward Voltage
I
F
= 50A
V
t
rr
Reverse Recovery Time
ns
Q
rr
Reverse Recovery Charge
μC
E
r
Reverse Recovery Energy
I
F
= 50A
V
R
= 600V
di/dt =2000A/μs
mJ
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