參數(shù)資料
型號: APTGT450DU60
廠商: Advanced Power Technology Ltd.
英文描述: Dual common source Trench + Field Stop IGBT Power Module
中文描述: 雙共源戴場站IGBT功率模塊
文件頁數(shù): 2/5頁
文件大?。?/td> 277K
代理商: APTGT450DU60
APTGT450DU60
A
APT website – http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
I
CES
Zero Gate Voltage Collector Current
Test Conditions
V
GE
= 0V, V
CE
= 600V
V
GE
=15V
I
C
= 450A
V
GE
= V
CE
, I
C
= 2mA
V
GE
= 20V, V
CE
= 0V
Min
5.0
Typ
1.4
1.5
5.8
Max
500
1.8
6.5
600
Unit
μA
T
j
= 25°C
T
j
= 150°C
V
CE(sat)
Collector Emitter Saturation Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
on
Turn on Energy
E
off
Turn off Energy
Reverse diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 450A
R
G
= 2.2
Inductive Switching (150°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 450A
R
G
= 2.2
Min
Typ
37
2.3
1.1
130
55
250
60
145
60
320
80
7.8
15.7
Max
Unit
nF
ns
ns
mJ
Test Conditions
Min
600
Typ
450
1.5
1.4
125
220
20.3
42.8
Max
500
750
1.9
Unit
V
T
j
= 25°C
T
j
= 150°C
Tc = 80°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
I
RM
Maximum Reverse Leakage Current
V
R
=600V
μA
I
F(AV)
Maximum Average Forward Current
50% duty cycle
I
F
= 450A
V
GE
= 0V
A
V
F
Diode Forward Voltage
V
t
rr
Reverse Recovery Time
ns
Q
rr
Reverse Recovery Charge
I
F
= 450A
V
R
= 300V
di/dt =4000A/μs
μC
相關(guān)PDF資料
PDF描述
APTGT450SK60 Buck chopper Trench + Field Stop IGBT Power Module
APTGT50A120T Phase leg Fast Trench + Field Stop IGBT Power Module
APTGT50A170T Phase leg Trench + Field Stop IGBT Power Module
APTGT50DA120D1 Boost chopper Trench IGBT Power Module
APTGT50DA120TG Boost chopper Fast Trench + Field Stop IGBT Power Module
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTGT450DU60G 功能描述:IGBT MOD TRENCH DUAL SOURCE SP6 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時(shí)的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTGT450SK60 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Buck chopper Trench + Field Stop IGBT Power Module
APTGT450SK60G 功能描述:IGBT 600V 550A 1750W SP6 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時(shí)的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTGT50A1202G 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk
APTGT50A120D1 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Phase leg Trench IGBT Power Module