參數(shù)資料
型號(hào): APTGT400A120
廠商: Advanced Power Technology Ltd.
英文描述: Phase leg Fast Trench + Field Stop IGBT Power Module
中文描述: 相腳快速戴場(chǎng)站IGBT功率模塊
文件頁數(shù): 2/5頁
文件大?。?/td> 280K
代理商: APTGT400A120
APTGT400A120
A
APT website – http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 1200V
V
GE
=15V
I
C
= 400A
V
GE
= V
CE
, I
C
= 4 mA
V
GE
= 20V, V
CE
= 0V
1.2
2.1
6.5
800
mA
T
j
= 25°C
T
j
= 125°C
1.4
5.0
1.7
2.0
5.8
V
CE(sat)
Collector Emitter Saturation Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
on
Turn on Energy
E
off
Turn off Energy
Reverse diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 400A
R
G
= 1.2
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 300A
R
G
= 1.2
Min
Typ
28
1.6
1.2
260
30
420
80
290
50
520
100
40
40
Max
Unit
nF
ns
ns
mJ
Test Conditions
Min
1200
Typ
400
1.6
1.6
170
280
36
72
Max
750
1000
2.1
Unit
V
T
j
= 25°C
T
j
= 125°C
Tc = 80°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
RM
Maximum Reverse Leakage Current
V
R
=1200V
μA
I
F(AV)
Maximum Average Forward Current
50% duty cycle
I
F
= 400A
V
GE
= 0V
A
V
F
Diode Forward Voltage
V
t
rr
Reverse Recovery Time
ns
Q
rr
Reverse Recovery Charge
I
F
= 400A
V
R
= 600V
di/dt =3500A/μs
μC
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