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參數資料
| 型號： | APTGT35H120T3 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Full - Bridge Trench IGBT Power Module |
| 中文描述： | 全-橋溝道IGBT功率模塊 |
| 文件頁數： | 2/5頁 |
| 文件大?。?/td> | 303K |
| 代理商： | APTGT35H120T3 |
APTGT35H120T3
A
APT website – http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
I
CES
Zero Gate Voltage Collector Current
Test Conditions
V
GE
= 0V, I
C
= 1.5mA
V
GE
= 0V, V
CE
= 1200V
V
GE
= 15V
I
C
= 35A
V
GE
= V
CE
, I
C
= 1.5mA
V
GE
= 20V, V
CE
= 0V
Min
Typ
1.7
2.0
5.8
Max
5
2.1
6.5
400
Unit
V
mA
1200
5.0
T
j
= 25°C
T
j
= 125°C
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
res
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
on
Turn-on Switching Energy
X
E
off
Turn-off Switching Energy
Y
X
E
on
includes diode reverse recovery
Y
In accordance with JEDEC standard JESD24-1
Reverse diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V, V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 35A
R
G
= 27
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 35A
R
G
= 27
Min
Typ
2.5
0.15
90
30
420
70
90
50
520
90
3.5
4.1
Max
Unit
nF
ns
ns
mJ
Test Conditions
Min
1200
Typ
30
2.0
2.3
1.8
Max
250
500
2.5
Unit
V
T
j
= 25°C
T
j
= 125°C
Tc = 70°C
I
RM
Maximum Reverse Leakage Current
V
R
=1200V
μA
I
F(AV)
Maximum Average Forward Current
50% duty cycle
I
F
= 30A
I
F
= 60A
I
F
= 30A
A
V
F
Diode Forward Voltage
T
j
= 125°C
V
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
370
t
rr
Reverse Recovery Time
500
660
3450
ns
Q
rr
Reverse Recovery Charge
I
F
= 30A
V
R
= 800V
di/dt =200A/μs
nC
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APTGT35H120T3G | 功能描述:IGBT MOD TRENCH FULL BRIDGE SP3 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APTGT35SK120D1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Buck chopper Trench IGBT Power Module |
| APTGT35SK120D1G | 功能描述:IGBT 1200V 55A 205W D1 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APTGT35X120BTP3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module |
| APTGT35X120BTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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