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參數(shù)資料
| 型號： | APTGT200U120D4 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Single switch Trench IGBT Power Module |
| 中文描述： | 單開關(guān)溝道IGBT功率模塊 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 159K |
| 代理商： | APTGT200U120D4 |
APTGT200U120D4
A
APT website – http://www.advancedpower.com
2 - 3
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
I
CES
Zero Gate Voltage Collector Current
Test Conditions
V
GE
= 0V, I
C
= 8mA
V
GE
= 0V, V
CE
= 1200V
V
GE
=15V
I
C
= 200A
V
GE
= V
CE
, I
C
= 8mA
V
GE
= 20V, V
CE
= 0V
Min
1200
1.4
5.0
Typ
1.7
2.0
5.8
Max
20
2.1
6.5
1200
Unit
V
mA
T
j
= 25°C
T
j
= 125°C
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
rss
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
off
Turn off Energy
Reverse diode ratings and characteristics
Test Conditions
V
GE
= 0V,V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 200A
R
G
= 4.7
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 200A
R
G
= 4.7
Min
Typ
14.4
0.65
150
90
550
130
180
100
650
180
26
Max
Unit
nF
ns
ns
mJ
T
j
= 25°C
T
j
= 125°C
1.6
1.6
2.2
V
F
Forward Voltage
V
GE
= 0V
I
F
= 200A
I
F
= 200A
V
R
= 600V
di/dt =990A/μs
I
F
= 200A
V
R
= 600V
di/dt=990A/μs
V
E
rec
Reverse Recovery Energy
T
j
= 125°C
16
mJ
T
j
= 25°C
20.8
Q
rr
Reverse Recovery Charge
T
j
= 125°C
38
μC
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
0.12
0.19
Unit
IGBT
Diode
R
thJC
Junction to Case
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
2500
V
T
J
T
STG
T
C
-40
-40
-40
3
1
150
125
125
5
2
420
°C
M6
M4
Torque Mounting torque
N.m
Wt
Package Weight
g
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| APTGT200U170D4 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Single switch Trench IGBT Power Module |
| APTGT20A60T1G | 功能描述:IGBT MODULE TRENCH PHASE LEG SP1 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT20DDA60T3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Dual Boost chopper Trench + Field Stop IGBT Power Module |
| APTGT20DDA60T3G | 功能描述:IGBT MODULE DUAL BSOOT CHOP SP3 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT20DSK60T3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Dual Buck chopper Trench + Field Stop IGBT Power Module |
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