- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366578 > APTGT100X120TE3 (Advanced Power Technology Ltd.) 3 Phase bridge Trench IGBT Power Module PDF資料下載
參數(shù)資料
| 型號： | APTGT100X120TE3 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | 3 Phase bridge Trench IGBT Power Module |
| 中文描述： | 3相橋溝道IGBT功率模塊 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 201K |
| 代理商： | APTGT100X120TE3 |
APTGT100X120TE3
A
APT website – http://www.advancedpower.com
2 - 3
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
I
CES
Zero Gate Voltage Collector Current
All ratings @ T
j
= 25°C unless otherwise specified
Test Conditions
V
GE
= 0V, I
C
= 5mA
V
GE
= 0V, V
CE
= 1200V
T
j
= 25°C
V
GE
=15V
I
C
= 100A
T
j
= 125°C
V
GE
= V
CE
, I
C
= 4 mA
V
GE
= 20V, V
CE
= 0V
Min
1200
1.4
5.0
Typ
1.7
2.0
Max
5
2.1
6.5
400
Unit
V
mA
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
off
Turn off Energy
Reverse diode ratings and characteristics
Symbol Characteristic
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 100A
R
G
= 3.9
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 100A
R
G
= 3.9
Min
Typ
7200
400
300
260
30
420
70
290
45
520
90
12
Max
Unit
pF
ns
ns
mJ
Test Conditions
I
F
= 100A
V
GE
= 0V
I
F
= 100A
V
R
= 600V
di/dt =900A/μs
I
F
= 100A
V
= 600V
di/dt =900A/μs T
j
= 125°C
Min
Typ
1.6
1.6
5
Max
2.1
Unit
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
V
F
Diode Forward Voltage
V
E
r
Reverse Recovery Energy
T
j
= 125°C
T
j
= 25°C
9
mJ
10
Q
rr
Reverse Recovery Charge
19
μC
Temperature sensor NTC
Symbol Characteristic
R
25
Resistance @ 25°C
B
25/50
T
25
= 298.16 K
Min
Typ
5
3375
Max
Unit
k
K
=
T
T
B
R
R
T
1
1
exp
25
50
/
25
25
T: Thermistor temperature
R
T
: Thermistor value at T
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTGT150A120D1 | Phase leg Trench IGBT Power Module |
| APTGT150A120D3 | Phase leg Trench IGBT Power Module |
| APTGT150A120T | Phase leg Fast Trench + Field Stop IGBT Power Module |
| APTGT150A170D1 | Phase leg Trench IGBT Power Module |
| APTGT150A170D3 | Phase leg Trench IGBT Power Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGT100X120TEG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT150A120 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Phase leg Fast Trench + Field Stop IGBT Power Module |
| APTGT150A1202G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk 制造商:Microsemi Corporation 功能描述:MOD IGBT 1200V 220A SP2 |
| APTGT150A120D1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Phase leg Trench IGBT Power Module |
| APTGT150A120D1G | 功能描述:IGBT MODULE TRENCH PHASE LEG D1 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。