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參數(shù)資料
| 型號(hào)： | APTGT100TL60T3G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | 150 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大小： | 218K |
| 代理商： | APTGT100TL60T3G |
APTGT100TL60T3G
APT
G
T
100T
L
60T
3G
–
Rev
0
Februar
y,
2009
www.microsemi.com
2- 7
All ratings @ Tj = 25°C unless otherwise specified
Q1 to Q4 Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
250
A
Tj = 25°C
1.5
1.9
VCE(sat)
Collector Emitter Saturation Voltage
VGE =15V
IC = 100A
Tj = 150°C
1.7
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 1.5 mA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Q1 to Q4 Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
6100
Coes
Output Capacitance
390
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
190
pF
QG
Gate charge
VGE=±15V, IC=100A
VCE=300V
1.1
C
Td(on)
Turn-on Delay Time
115
Tr
Rise Time
45
Td(off)
Turn-off Delay Time
225
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 100A
RG = 3.3Ω
55
ns
Td(on)
Turn-on Delay Time
130
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
300
Tf
Fall Time
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 100A
RG = 3.3Ω
70
ns
Tj = 25°C
0.4
Eon
Turn on Energy
Tj = 150°C
0.875
mJ
Tj = 25°C
2.5
Eoff
Turn off Energy
VGE = ±15V
VBus = 300V
IC = 100A
RG = 3.3Ω
Tj = 150°C
3.5
mJ
Isc
Short Circuit data
VGE ≤15V ; VBus = 360V
tp ≤ 6s ; Tj = 150°C
500
A
RthJC
Junction to Case Thermal Resistance
0.44
°C/W
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