參數(shù)資料
型號(hào): APTGT100SK60T
廠商: Advanced Power Technology Ltd.
英文描述: Buck chopper Trench + Field Stop IGBT Power Module
中文描述: 降壓斬波器溝槽場(chǎng)站IGBT功率模塊
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 288K
代理商: APTGT100SK60T
APTGT100SK60T
A
APT website – http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
I
CES
Zero Gate Voltage Collector Current
Test Conditions
V
GE
= 0V, V
CE
= 600V
V
GE
=15V
I
C
= 100A
V
GE
= V
CE
, I
C
= 1.5 mA
V
GE
= 20V, V
CE
= 0V
Min
5.0
Typ
1.5
1.7
5.8
Max
250
1.9
6.5
400
Unit
μA
T
j
= 25°C
T
j
= 150°C
V
CE(sat)
Collector Emitter Saturation Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
on
Turn on Energy
E
off
Turn off Energy
Chopper diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 100A
R
G
= 10
Inductive Switching (150°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 100A
R
G
= 10
Min
Typ
6100
390
190
115
45
225
55
130
50
300
70
1.8
3.5
Max
Unit
pF
ns
ns
mJ
Test Conditions
Min
600
Typ
100
1.6
1.5
125
220
4.7
9.9
Max
250
500
2
Unit
V
T
j
= 25°C
T
j
= 150°C
Tc = 80°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
I
RM
Maximum Reverse Leakage Current
V
R
=600V
μA
I
F(AV)
Maximum Average Forward Current
50% duty cycle
I
F
= 100A
V
GE
= 0V
A
V
F
Diode Forward Voltage
V
t
rr
Reverse Recovery Time
ns
Q
rr
Reverse Recovery Charge
I
F
= 100A
V
R
= 300V
di/dt =2000A/μs
μC
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