參數(shù)資料
型號: APTGT100DH120TG
廠商: Advanced Power Technology Ltd.
英文描述: Asymmetrical - Bridge Fast Trench + Field Stop IGBT Power Module
中文描述: 非對稱-橋快速戴場站IGBT功率模塊
文件頁數(shù): 2/5頁
文件大小: 291K
代理商: APTGT100DH120TG
APTGT100DH120TG
A
APT website – http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 1200V
V
GE
=15V
I
C
= 100A
V
GE
= V
CE
, I
C
= 2 mA
V
GE
= 20V, V
CE
= 0V
250
2.1
6.5
400
μA
T
j
= 25°C
T
j
= 125°C
1.4
5.0
1.7
2.0
5.8
V
CE(sat)
Collector Emitter Saturation Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
on
Turn on Energy
E
off
Turn off Energy
Diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 100A
R
G
= 3.9
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 100A
R
G
= 3.9
Min
Typ
7200
400
300
260
30
420
70
290
50
520
90
10
10
Max
Unit
pF
ns
ns
mJ
Test Conditions
Min
1200
Typ
100
1.6
1.6
170
280
9
18
Max
250
500
2.1
Unit
V
T
j
= 25°C
T
j
= 125°C
Tc = 80°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
RM
Maximum Reverse Leakage Current
V
R
=1200V
μA
I
F
DC Forward Current
I
F
= 100A
V
GE
= 0V
A
V
F
Diode Forward Voltage
V
t
rr
Reverse Recovery Time
ns
Q
rr
Reverse Recovery Charge
I
F
= 100A
V
R
= 600V
di/dt =2000A/μs
μC
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