- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366578 > APTGS50X170TE3 (Advanced Power Technology Ltd.) 3 Phase bridge NPT IGBT Power Module PDF資料下載
參數(shù)資料
| 型號(hào)： | APTGS50X170TE3 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | 3 Phase bridge NPT IGBT Power Module |
| 中文描述： | 3相橋不擴(kuò)散核武器條約IGBT功率模塊 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 185K |
| 代理商： | APTGS50X170TE3 |
APTGS50X170TE3
A
APT website – http://www.advancedpower.com
2 - 3
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
All ratings @ T
j
= 25°C unless otherwise specified
Test Conditions
V
GE
= 0V, I
C
= 1mA
T
j
= 25°C
Zero Gate Voltage Collector Current
V
CE
= 1700V
V
GE
=15V
I
C
= 50A
Gate Threshold Voltage
V
GE
= V
CE
, I
C
= 2.5 mA
Gate – Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
Min
1700
4.5
Typ
0.02
1.5
2.7
3.2
Max
0.1
3.3
6.5
100
Unit
V
I
CES
V
GE
= 0V
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
mA
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
V
nA
Test Conditions
V
GE
= 0V, V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 900V
I
C
= 50A
R
G
= 30
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 900V
I
C
= 50A
R
G
= 30
Min
Typ
Max
Unit
C
ies
Input Capacitance
3500
pF
T
d(on)
T
r
T
d(off)
T
f
T
d(on)
T
r
T
d(off)
T
f
E
off
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn off Energy
100
100
800
30
100
100
900
30
14.5
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
I
F
= 50A
V
GE
= 0V
I
F
= 50A
V
R
= 900V
di/dt =750A/μs
I
F
= 50A
V
= 900V
di/dt =750A/μs T
j
= 125°C
Min
Typ
2.2
2.0
2
Max
2.6
Unit
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
V
F
Diode Forward Voltage
V
E
r
Reverse Recovery Energy
T
j
= 125°C
T
j
= 25°C
4
mJ
6
Q
rr
Reverse Recovery Charge
12
μC
Temperature sensor NTC
Symbol Characteristic
R
25
Resistance @ 25°C
B
25/50
T
25
= 298.16 K
Min
Typ
5
3375
Max
Unit
k
K
=
T
T
B
R
R
T
1
1
exp
25
50
/
25
25
T: Thermistor temperature
R
T
: Thermistor value at T
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTGS75X170E3 | 3 Phase bridge NPT IGBT Power Module |
| APTGS75X170TE3 | 3 Phase bridge NPT IGBT Power Module |
| APTGT100A120T | Phase leg Fast Trench + Field Stop IGBT Power Module |
| APTGT100A170T | Phase leg Trench + Field Stop IGBT Power Module |
| APTGT100A60T | Phase leg Trench + Field Stop IGBT Power Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGS50X170TE3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGS75X170E3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGS75X170E3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGS75X170TE3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGT100A1202G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。