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參數(shù)資料
| 型號： | APTGF90X60TE3 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | 3 Phase bridge NPT IGBT Power Module |
| 中文描述： | 3相橋不擴散核武器條約IGBT功率模塊 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 189K |
| 代理商： | APTGF90X60TE3 |
APTGF90X60TE3
A
APT website – http://www.advancedpower.com
3 - 3
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
0.29
0.55
Unit
IGBT
Diode
R
thJC
Junction to Case
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque Mounting torque
Wt
Package Weight
Package outline
2500
V
T
J
T
STG
T
C
-40
-40
-40
3
150
125
125
4.5
300
°C
To heatsink
M5
N.m
g
PIN 1
PIN 21
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF90X60TE3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGFQ25H120T2G | 功能描述:IGBT 1200V 40A 227W MODULE RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGL100TL170G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk |
| APTGL120DA120T1G | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Boost chopper Trench + Field Stop IGBT4 Power module |
| APTGL120SK120T1G | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Buck chopper Trench + Field Stop IGBT4 Power module |
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