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參數(shù)資料
| 型號(hào)： | APTGF75H120TG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 100 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP4, MODULE-14 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 260K |
| 代理商： | APTGF75H120TG |
APTGF75H120TG
A
P
T
G
F
75
H
120T
G
–
R
ev
2
J
ul
y,
2006
www.microsemi.com
2 - 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
250
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 1200V
Tj = 125°C
500
A
Tj = 25°C
3.2
3.7
VCE(sat)
Collector Emitter saturation Voltage
VGE =15V
IC = 75A
Tj = 125°C
3.9
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 2.5 mA
4.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = ±20V, VCE = 0V
±500
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
5.1
Coes
Output Capacitance
0.7
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
0.4
nF
Td(on)
Turn-on Delay Time
120
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
310
Tf
Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 75A
RG = 7.5
20
ns
Td(on)
Turn-on Delay Time
130
Tr
Rise Time
60
Td(off)
Turn-off Delay Time
360
Tf
Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 75A
RG = 7.5
30
ns
Eon
Turn-on Switching Energy
Tj = 125°C
9
Eoff
Turn-off Switching Energy
VGE = ±15V
VBus = 600V
IC = 75A
RG = 7.5
Tj = 125°C
4
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
500
A
IF
DC Forward Current
Tc = 80°C
50
A
Tj = 25°C
2.1
VF
Diode Forward Voltage
IF = 50A
Tj = 125°C
1.9
V
Tj = 25°C
95
trr
Reverse Recovery Time
Tj = 125°C
190
ns
Tj = 25°C
4.2
Qrr
Reverse Recovery Charge
Tj = 125°C
9
C
Tj = 25°C
1.5
Er
Reverse Recovery Energy
IF = 50A
VR = 600V
di/dt =1500A/s
Tj = 125°C
3
mJ
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