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參數(shù)資料
| 型號(hào)： | APTGF50X60E2 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | 3 Phase bridge NPT IGBT Power Module |
| 中文描述： | 3相橋不擴(kuò)散核武器條約IGBT功率模塊 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 192K |
| 代理商： | APTGF50X60E2 |
APTGF50X60E2
APTGF50X60P2
A
APT website – http://www.advancedpower.com
2 - 4
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
Test Conditions
V
GE
= 0V, I
C
= 500μA
V
GE
= 0V
V
CE
= 600V
V
GE
= 15V
I
C
= 50A
V
GE
= V
CE
, I
C
= 1mA
V
GE
= 20V, V
CE
= 0V
Min
600
3
Typ
1
1
1.95
2.2
Max
500
2.45
6.5
400
Unit
V
μA
mA
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
CES
Zero Gate Voltage Collector Current
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
res
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
off
Turn off Energy
Reverse diode ratings and characteristics
Symbol Characteristic
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V, V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 50A
R
G
= 2.7
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 50A
R
G
= 2.7
Min
Typ
2200
200
40
9
120
12
42
10
130
21
1.0
Max
Unit
pF
ns
ns
mJ
Test Conditions
I
F
= 50A
V
GE
= 0V
I
F
= 50A
V
R
= 300V
di/dt =800A/μs
I
F
= 50A
V
= 300V
di/dt =800A/μs T
j
= 125°C
Min
Typ
1.25
1.2
Max
1.6
Unit
T
j
= 25°C
T
j
= 125°C
V
F
Diode Forward Voltage
V
E
R
Reverse Recovery Energy
T
j
= 125°C
1.5
mJ
T
j
= 25°C
3.4
Q
rr
Reverse Recovery Charge
5.6
μC
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
0.5
0.8
Unit
IGBT
Diode
R
thJC
Junction to Case
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque Mounting torque
Wt
Package Weight
2500
V
T
J
T
STG
T
C
-40
-40
-40
2
150
125
125
3.5
185
°C
To Heatsink
M5
N.m
g
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF50X60E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF50X60P2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF50X60P2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF50X60RTP3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGF50X60RTP3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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