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參數(shù)資料
| 型號： | APTGF50X60BTP3 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| 中文描述： | 輸入整流橋橋制動三相IGBT功率模塊不擴(kuò)散核武器條約 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 201K |
| 代理商： | APTGF50X60BTP3 |
APTGF50X60RTP3
APTGF50X60BTP3
A
APT website – http://www.advancedpower.com
2 - 4
IGBT & Diode Brake
(only for APTGF50X60BTP3)
Absolute maximum ratings
Symbol
Parameter
V
CES
Collector - Emitter Breakdown Voltage
Max ratings
600
35
25
70
±20
155
10
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
C
= 80°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
I
F
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
DC Forward Current
A
V
W
A
IGBT & Diode Inverter
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
Parameter
Max ratings
600
70
50
125
±20
250
225A @ 360V
30
80
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
T
C
= 80°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
RBSOA Reverse Bias Save Operating Area
I
F
DC Forward Current
I
FRM
Repetitive Peak Forward Current
2.
Electrical Characteristics
Diodes Rectifier
Electrical Characteristics
Symbol Characteristic
I
R
Reverse Current
V
F
Forward Voltage
R
thJC
Junction to Case
IGBT Brake & Diode
(only for APTGF50X60BTP3)
Electrical Characteristics
Symbol Characteristic
I
CES
Zero Gate Voltage Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
A
V
W
t
p
= 1ms
A
Test Conditions
V
R
= 1600V
I
F
= 50A
Min
Typ
3
1.0
Max
0.65
Unit
mA
V
°C/W
T
j
= 150°C
T
j
= 150°C
Test Conditions
V
GE
= 0V, V
CE
= 600V
V
GE
= 15V
I
C
= 20A
V
GE
= V
CE
, I
C
= 0.5mA
V
GE
= 20V, V
CE
= 0V
V
GE
= 0V,V
CE
= 25V
f = 1MHz
V
GE
= 0V
I
F
= 10A
Min
Typ
1
2.0
2.2
5.5
Max Unit
500
2.5
6.5
400
1.7
0.8
2.3
μA
T
j
= 25°C
T
j
= 125°C
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
C
ies
C
res
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Reverse Transfer Capacitance
4.5
V
nA
1100
70
1.25
1.2
pF
T
j
= 25°C
T
j
= 125°C
IGBT
Diode
V
F
Forward Voltage
V
R
thJC
Junction to Case
°C/W
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PDF描述 |
|---|---|
| APTGF50X60RTP3 | Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGF660U60D4 | Single switch NPT IGBT Power Module |
| APTGF75DA60D1 | Boost Chopper NPT IGBT Power Module |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF50X60BTP3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF50X60E2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF50X60E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF50X60P2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF50X60P2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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