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參數(shù)資料
| 型號： | APTGF30X60BTP2 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| 中文描述： | 輸入整流橋橋制動三相IGBT功率模塊不擴散核武器條約 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 188K |
| 代理商： | APTGF30X60BTP2 |
APTGF30X60RTP2
APTGF30X60BTP2
A
APT website – http://www.advancedpower.com
2 - 4
IGBT & Diode Brake
(only for APTGF30X60BTP2)
Absolute maximum ratings
Symbol
Parameter
V
CES
Collector - Emitter Breakdown Voltage
Max ratings
600
25
15
37
±20
100
10
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
C
= 80°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
I
F
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
DC Forward Current
A
V
W
A
IGBT & Diode Inverter
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
Parameter
Max ratings
600
50
30
75
±20
180
120A @ 360V
30
60
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
T
C
= 80°C
T
C
= 80°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
SCSOA
I
F
I
FSM
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Short circuit Safe Operating Area
DC Forward Current
Surge Forward Current
A
V
W
t
p
= 1ms
A
2.
Electrical Characteristics
Diodes Rectifier
Electrical Characteristics
Symbol Characteristic
I
R
Reverse Current
Test Conditions
V
R
= 1600V
I
F
= 30A
I
F
= 30A
Min
Typ
2
1.3
1.1
Max
1.5
1.15
1
Unit
mA
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
V
F
Forward Voltage
V
R
thJC
Junction to Case
°C/W
IGBT Brake & Diode
(only for APTGF30X60BTP2) Electrical
Characteristics
Symbol Characteristic
Test Conditions
Min
4.5
Typ
0.5
0.8
1.95
2.2
5.5
Max
500
2.45
6.5
300
Unit
μA
mA
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V
V
CE
= 600V
V
CE(on)
Collector Emitter on Voltage
V
GE
= 15V
I
C
= 15A
V
GE
= V
CE
, I
C
= 0.4mA
V
GE
= 20V, V
CE
= 0V
V
GE
= 0V, V
CE
= 25V
f = 1MHz
V
GE
= 0V
I
F
= 30A
V
V
GE(th)
I
GES
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
C
ies
Input Capacitance
800
pF
T
j
= 25°C
T
j
= 125°C
IGBT
Diode
1.25
1.2
1.7
1.3
1.2
V
F
Forward Voltage
V
R
thJC
Junction to Case
°C/W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF30X60BTP2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF30X60E2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF30X60E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF30X60P2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF30X60P2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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