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參數(shù)資料
| 型號： | APTGF300U120D |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Single Switch with Series diodes NPT IGBT Power Module |
| 中文描述： | 單系列開關二極管和IGBT功率模塊不擴散核武器條約 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 273K |
| 代理商： | APTGF300U120D |
APTGF300U120D
A
APT website – http://www.advancedpower.com
2 – 5
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
Test Conditions
V
GE
= 0V, I
C
= 4mA
V
GE
= 0V
V
CE
= 1200V
Min
1200
4.5
Typ
0.4
25
3.2
4
Max
6
3.9
6.5
±1
Unit
V
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
CES
Zero Gate Voltage Collector Current
mA
V
CE(on)
Collector Emitter on Voltage
V
GE
=15V
I
C
= 300A
V
GE
= V
CE
, I
C
= 12mA
V
GE
= ±20V, V
CE
= 0V
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
on
Turn-on Switching Energy
E
off
Turn-off Switching Energy
Series diode ratings and characteristics
Symbol Characteristic
I
F(AV)
Maximum Average Forward Current
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
μA
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Inductive Switching (125°C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 300A
R
G
= 2
Min
Typ
21
2.9
1.52
70
50
500
30
17
18
Max
Unit
nF
ns
mJ
Test Conditions
Min
Typ
250
2.2
2.4
2.2
13
40
Max
2.5
Unit
A
50% duty cycle
I
F
= 300A
I
F
= 400A
I
F
= 400A
Tc = 85°C
V
F
Diode Forward Voltage
T
j
= 150°C
V
T
j
= 25°C
T
j
= 125°C
Q
rr
Reverse Recovery Charge
I
F
= 300A
μC
Thermal and package characteristics
Symbol Characteristic
Min
2500
-40
-40
-40
3
2
Typ
Max
0.06
0.13
150
125
100
5
3.5
280
Unit
IGBT
Diode
R
thJC
Junction to Case
°C/W
V
ISOL
T
J
T
STG
T
C
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
V
°C
To heatsink
For terminals
M6
M5
Torque Mounting torque
N.m
Wt
Package Weight
g
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| APTGF30X60BTP2 | Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF300U120DG | 功能描述:IGBT 1200V 400A 1780W SP6 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APTGF300U60AG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF300U60D4 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Single switch NPT IGBT Power Module |
| APTGF300U60D4G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF30A60T1G | 功能描述:IGBT MODULE NPT PHASE LEG SP1 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
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