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參數(shù)資料
| 型號： | APTGF15X60BTP2 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| 中文描述： | 輸入整流橋橋制動三相IGBT功率模塊不擴(kuò)散核武器條約 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 188K |
| 代理商： | APTGF15X60BTP2 |
APTGF15X60RTP2
APTGF15X60BTP2
A
APT website – http://www.advancedpower.com
3 - 4
IGBT & Diode Inverter
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
Test Conditions
V
GE
= 0V, I
C
= 500μA
V
GE
= 0V
V
CE
= 600V
V
GE
=15V
I
C
= 15A
V
GE
= V
CE
, I
C
= 0.4 mA
V
GE
= 20V, V
CE
= 0V
V
GE
= 0V, V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 15A
R
G
= 67
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 15A
R
G
= 67
Min
600
4.5
Typ
0.5
0.8
1.95
2.2
5.5
Max
500
2.45
6.5
300
Unit
V
μA
mA
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
CES
Zero Gate Voltage Collector Current
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
C
ies
Input Capacitance
800
pF
T
d(on)
T
r
T
d(off)
T
f
T
d(on)
T
r
T
d(off)
T
f
E
off
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn off Energy
50
50
250
30
50
50
270
40
0.5
1.25
1.2
1.2
ns
ns
mJ
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
1.7
V
F
Forward Voltage
V
GE
= 0V
I
F
= 15A
I
F
= 15A
V
R
= 300V
di/dt=550A/μs
V
Q
rr
Reverse Recovery Charge
T
j
= 125°C
IGBT
Diode
2
μC
1.3
1.8
R
thJC
Junction to Case
°C/W
Temperature sensor NTC
Symbol Characteristic
R
25
Resistance @ 25°C
B
25/50
T
25
= 298.16 K
Min
Typ
5
3375
Max
Unit
k
K
=
T
T
B
R
R
T
1
1
exp
25
50
/
25
25
3.
Thermal and package characteristics
Symbol Characteristic
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
T
J
Operating junction temperature range
T
STG
Storage Temperature Range
T
C
Operating Case Temperature
Torque Mounting torque
Wt
Package Weight
Min
Typ
Max
Unit
V
ISOL
2500
V
-40
-40
-40
150
125
125
3.3
185
°C
To Heatsink
M5
N.m
g
T: Thermistor temperature
R
T
: Thermistor value at T
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTGF10X60BTP2 | Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGF10X60RTP2 | Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGF165DA60D1 | Boost Chopper NPT IGBT Power Module |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF15X60BTP2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF15X60RTP2 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGF15X60RTP2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF165A60D1G | 功能描述:IGBT NPT PHASE 600V 230A D1 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGF165DA60D1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Boost Chopper NPT IGBT Power Module |
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