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參數(shù)資料
| 型號： | APTGF125X60E3 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | 3 Phase bridge NPT IGBT Power Module |
| 中文描述： | 3相橋不擴(kuò)散核武器條約IGBT功率模塊 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 179K |
| 代理商： | APTGF125X60E3 |
APTGF125X60E3
A
APT website – http://www.advancedpower.com
2 - 3
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
All ratings @ T
j
= 25°C unless otherwise specified
Test Conditions
V
GE
= 0V, I
C
= 500μA
T
j
= 25°C
Zero Gate Voltage Collector Current
V
CE
= 600V
V
GE
=15V
I
C
= 150A
Gate Threshold Voltage
V
GE
= V
CE
, I
C
= 3 mA
Gate – Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
Min
600
1.7
4.5
Typ
1
1
2.0
2.2
Max
500
2.45
6.5
450
Unit
V
μA
mA
I
CES
V
GE
= 0V
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
V
nA
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
res
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
off
Turn off Energy
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
V
GE
= 0V, V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 150A
R
G
= 1.5
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 150A
R
G
= 1.5
Min
Typ
6500
600
115
28
200
25
125
30
225
35
4.6
Max
Unit
pF
ns
ns
mJ
Test Conditions
I
F
= 150A
V
GE
= 0V
I
F
= 150A
V
R
= 300V
di/dt =800A/μs
I
F
= 150A
V
= 300V
di/dt =800A/μs T
j
= 125°C
Min
Typ
1.25
1.2
Max
1.6
Unit
T
j
= 25°C
T
j
= 125°C
V
F
Diode Forward Voltage
V
E
r
Reverse Recovery Energy
T
j
= 125°C
4.7
mJ
T
j
= 25°C
10
Q
rr
Reverse Recovery Charge
18
μC
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
0.22
0.44
Unit
IGBT
Diode
R
thJC
Junction to Case
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque Mounting torque
Wt
Package Weight
2500
V
T
J
T
STG
T
C
-40
-40
-40
3
150
125
125
4.5
300
°C
To heatsink
M5
N.m
g
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| APTGF125X60TE3 | 3 Phase bridge NPT IGBT Power Module |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF125X60E3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF125X60TE3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF125X60TE3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF150A120DG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF150A120G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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