- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366576 > APTGF10X120P2 (Advanced Power Technology Ltd.) 3 Phase bridge NPT IGBT Power Module PDF資料下載
參數(shù)資料
| 型號： | APTGF10X120P2 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | 3 Phase bridge NPT IGBT Power Module |
| 中文描述： | 3相橋不擴(kuò)散核武器條約IGBT功率模塊 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 191K |
| 代理商： | APTGF10X120P2 |
APTGF10X120E2
APTGF10X120P2
A
APT website – http://www.advancedpower.com
2 - 4
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
Test Conditions
V
GE
= 0V, I
C
= 500μA
V
GE
= 0V
V
CE
= 1200V
V
GE
= 15V
I
C
= 10A
V
GE
= V
CE
, I
C
= 0.35 mA
V
GE
= 20V, V
CE
= 0V
Min
1200
4.5
Typ
200
800
2.7
3.3
5.5
Max
400
3.2
3.9
6.5
120
Unit
V
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
CES
Zero Gate Voltage Collector Current
μA
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
Reverse diode ratings and characteristics
Symbol Characteristic
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 10A
R
G
= 150
Min
Typ
600
60
38
55
50
380
80
Max
110
100
570
120
Unit
pF
ns
Test Conditions
I
F
= 10A
V
GE
= 0V
I
F
= 10A
V
R
= 600V
di/dt =400A/μs
I
F
= 10A
V
= 600V
di/dt =400A/μs T
j
= 125°C
Min
Typ
2.9
2.6
Max
3.4
Unit
T
j
= 25°C
T
j
= 125°C
V
F
Diode Forward Voltage
V
t
rr
Reverse Recovery Time
T
j
= 125°C
0.5
μs
T
j
= 25°C
0.4
Q
rr
Reverse Recovery Charge
1.2
μC
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
1.55
2
Unit
IGBT
Diode
R
thJC
Junction to Case
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque Mounting torque
Wt
Package Weight
2500
V
T
J
T
STG
T
C
-40
-40
-40
2
150
125
125
3.5
185
°C
To Heatsink
M5
N.m
g
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTGF25X120E2 | 3 Phase bridge NPT IGBT Power Module |
| APTGF25X120P2 | 3 Phase bridge NPT IGBT Power Module |
| APTGF125X60E3 | 3 Phase bridge NPT IGBT Power Module |
| APTGF125X60TE3 | 3 Phase bridge NPT IGBT Power Module |
| APTGF150A120T | Phase leg NPT IGBT Power Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF10X120P2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF10X60BTP2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGF10X60BTP2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF10X60RTP2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGF10X60RTP2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。