- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄57949 > APTC90SKM60T1G (MICROSEMI POWER PRODUCTS GROUP) 59 A, 900 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | APTC90SKM60T1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 59 A, 900 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 204K |
| 代理商： | APTC90SKM60T1G |
APTC90SKM60T1G
APT
C
90SKM
60T1G
–
Rev
0
August,
200
9
www.microsemi.com
2 – 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 900V
Tj = 25°C
200
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 900V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 52A
50
60
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 6mA
2.5
3
3.5
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
200
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
13.6
Coss
Output Capacitance
VGS = 0V ; VDS = 100V
f = 1MHz
0.66
nF
Qg
Total gate Charge
540
Qgs
Gate – Source Charge
64
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 400V
ID = 52A
230
nC
Td(on)
Turn-on Delay Time
70
Tr
Rise Time
20
Td(off)
Turn-off Delay Time
400
Tf
Fall Time
Inductive Switching (125°C)
VGS = 10V
VBus = 600V
ID = 52A
RG = 3.8Ω
25
ns
Eon
Turn-on Switching Energy
3
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 10V ; VBus = 600V
ID = 52A ; RG = 3.8Ω
1.5
mJ
Eon
Turn-on Switching Energy
4.2
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 10V ; VBus = 600V
ID = 52A ; RG = 3.8Ω
1.7
mJ
Chopper diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1000
V
Tj = 25°C
100
IRM
Maximum Reverse Leakage Current
VR=1000V
Tj = 125°C
500
A
IF
DC Forward Current
Tc = 80°C
60
A
IF = 60A
2.2
2.8
IF = 120A
2.8
VF
Diode Forward Voltage
IF = 60A
Tj = 125°C
1.8
V
Tj = 25°C
235
trr
Reverse Recovery Time
Tj = 125°C
305
ns
Tj = 25°C
460
Qrr
Reverse Recovery Charge
IF = 60A
VR = 667V
di/dt =200A/s
Tj = 125°C
2600
nC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTC90TDUM60TPG | 59 A, 900 V, 0.06 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTCV60TLM99T3G | 50 A, 600 V, N-CHANNEL IGBT |
| APTGF100DA120TG | 135 A, 1200 V, N-CHANNEL IGBT |
| APTGF150X60TE3G | 225 A, 600 V, N-CHANNEL IGBT |
| APTGF200DA120D3G | IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTC90TAM60TPG | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk |
| APTC90TDUM60TPG | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Triple dual Common Source Super Junction MOSFET Power Module |
| APTC90VDA12T1G | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Dual boost chopper Super Junction MOSFET Power Module |
| APTCFGP1VTR | 功能描述:觸覺開關(guān) SW TACT SPST 0.05A 12VDC RoHS:否 制造商:C&K Components 工作力:2 N 執(zhí)行器:Round 電流額定值:50 mA 電壓額定值 DC:32 V 電壓額定值 AC: 功率額定值:1 VA 接地端子:Yes 觸點(diǎn)形式:SPST-NO 開關(guān)功能: 安裝風(fēng)格:SMD/SMT 安裝方向:Right 晶體管管座高度: 顏色: 照明:Not Illuminated 照明顏色: 封裝: |
| APTCFGP2V | 制造商:APEM 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。