- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄57949 > APTC90SKM60CT1G (MICROSEMI POWER PRODUCTS GROUP) 59 A, 900 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | APTC90SKM60CT1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 59 A, 900 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 221K |
| 代理商： | APTC90SKM60CT1G |
APTC90SKM60CT1G
APT
C
90SKM
60CT
1G
–
Rev
0
Septem
ber
,2009
www.microsemi.com
4 – 6
Typical CoolMOS Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Th
e
rmal
Imp
e
da
n
c
e
(
°C
/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
6V
0
80
160
240
0
5
10
15
20
VDS, Drain to Source Voltage (V)
I D
,Dra
in
Curre
n
t(
A
)
Low Voltage Output Characteristics
VGS=20, 8V
0
10
20
30
40
50
60
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,DC
Dr
ai
n
Cu
rr
en
t(A
)
DC Drain Current vs Case Temperature
900
925
950
975
1000
25
50
75
100
125
TJ, Junction Temperature (°C)
Breakdown Voltage vs Temperature
BV
DS
S
,D
rai
n
t
o
So
urc
e
B
re
a
k
down
Volt
age
Maximum Safe Operating Area
10 ms
100 s
1
10
100
1000
1
10
100
1000
VDS, Drain to Source Voltage (V)
I D
,Dra
in
Current
(
A
)
limited by RDSon
Single pulse
TJ=150°C
TC=25°C
Ciss
Crss
Coss
1
10
100
1000
10000
100000
0
25 50 75 100 125 150 175 200
VDS, Drain to Source Voltage (V)
C
,C
a
pa
c
ita
nc
e
(
pF)
Capacitance vs Drain to Source Voltage
0
2
4
6
8
10
0
100
200
300
400
500
600
Gate Charge (nC)
V
GS
,G
a
te
t
o
S
o
u
rc
e
Vo
lt
ag
e
(
V
)
Gate Charge vs Gate to Source Voltage
VDS=400V
ID=52A
TJ=25°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTC90SKM60T1G | 59 A, 900 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTC90TDUM60TPG | 59 A, 900 V, 0.06 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTCV60TLM99T3G | 50 A, 600 V, N-CHANNEL IGBT |
| APTGF100DA120TG | 135 A, 1200 V, N-CHANNEL IGBT |
| APTGF150X60TE3G | 225 A, 600 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTC90SKM60T1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
| APTC90TAM60TPG | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk |
| APTC90TDUM60TPG | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Triple dual Common Source Super Junction MOSFET Power Module |
| APTC90VDA12T1G | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Dual boost chopper Super Junction MOSFET Power Module |
| APTCFGP1VTR | 功能描述:觸覺開關(guān) SW TACT SPST 0.05A 12VDC RoHS:否 制造商:C&K Components 工作力:2 N 執(zhí)行器:Round 電流額定值:50 mA 電壓額定值 DC:32 V 電壓額定值 AC: 功率額定值:1 VA 接地端子:Yes 觸點形式:SPST-NO 開關(guān)功能: 安裝風格:SMD/SMT 安裝方向:Right 晶體管管座高度: 顏色: 照明:Not Illuminated 照明顏色: 封裝: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。