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參數(shù)資料
| 型號： | APTC80TDU15P |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Triple dual Common Source Super Junction MOSFET Power Module |
| 中文描述： | 三雙共源超結(jié)MOSFET的功率模塊 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 339K |
| 代理商： | APTC80TDU15P |
APTC80TDU15P
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APT website – http://www.advancedpower.com
1 – 6
S3/S 4
G5
D5
S5
S5/ S6
S1
D1
G1
S1/S2
S3
D3
G3
D6
S6
G6
D2
G2
S2
D4
S4
G4
G5
G6
S6
S5
G3
D 3
D 5
S3/S4
G4
S4
D 6
D 4
S3
D 1
S5/S6
S2
G2
S1
G1
D 2
S1/S2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
800
V
Tc = 25°C
28
ID
Continuous Drain Current
Tc = 80°C
21
IDM
Pulsed Drain current
110
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
150
m
PD
Maximum Power Dissipation
Tc = 25°C
277
W
IAR
Avalanche current (repetitive and non repetitive)
24
A
EAR
Repetitive Avalanche Energy
0.5
EAS
Single Pulse Avalanche Energy
670
mJ
VDSS = 800V
RDSon = 150m max @ Tj = 25°C
ID = 28A @ Tc = 25°C
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Very low (12mm) profile
Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
Triple dual Common Source
Super Junction MOSFET
Power Module
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|---|---|
| APTC80TDU15PG | 功能描述:MOSFET MOD TRIPLE DUAL SRC SP6-P RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTC90A12T1G | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Phase leg Super Junction MOSFET Power Module |
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