參數(shù)資料
型號: APTC80DDA29T3
廠商: Advanced Power Technology Ltd.
英文描述: Dual boost chopper Super Junction MOSFET Power Module
中文描述: 雙升壓斬波器超結(jié)MOSFET的功率模塊
文件頁數(shù): 6/6頁
文件大?。?/td> 345K
代理商: APTC80DDA29T3
APTC80DDA29T3
A
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
5
10
I
D
, Drain Current (A)
15
20
25
t
V
DS
=533V
R
G
=5
T
J
=125°C
L=100μH
Rise and Fall times vs Current
t
r
t
f
0
10
20
30
40
50
5
10
I
D
, Drain Current (A)
15
20
25
t
r
f
V
DS
=533V
R
G
=5
T
J
=125°C
L=100μH
Switching Energy vs Current
E
on
E
off
0
100
200
300
400
500
600
700
800
5
10
I
D
, Drain Current (A)
15
20
25
E
V
DS
=533V
R
G
=5
T
J
=125°C
L=100μH
E
on
E
off
0
250
500
750
1000
1250
0
10
Gate Resistance (Ohms)
20
30
40
50
S
Switching Energy vs Gate Resistance
V
DS
=533V
I
D
=15A
T
J
=125°C
L=100μH
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
350
400
4
6
8
10
12
14
I
D
, Drain Current (A)
F
Operating Frequency vs Drain Current
V
DS
=533V
D=50%
R
G
=5
T
J
=125°C
T
C
=75°C
T
J
=25°C
T
J
=150°C
1
10
100
1000
0.2
0.6
1
1.4
1.8
V
SD
, Source to Drain Voltage (V)
I
D
,
Source to Drain Diode Forward Voltage
“COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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