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參數(shù)資料
| 型號(hào)： | APTC80DDA15T3 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Dual boost chopper Super Junction MOSFET Power Module |
| 中文描述： | 雙升壓斬波器超結(jié)MOSFET的功率模塊 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 344K |
| 代理商： | APTC80DDA15T3 |
APTC80DDA15T3
A
APT website – http://www.advancedpower.com
2 – 6
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BV
DSS
Drain - Source Breakdown Voltage
Test Conditions
V
GS
= 0V, I
D
= 375μA
V
GS
= 0V,V
DS
= 800V
V
GS
= 0V,V
DS
= 800V
V
GS
= 10V, I
D
= 14A
V
GS
= V
DS
, I
D
= 2mA
V
GS
= ±20
V, V
DS
= 0V
Min
800
2.1
Typ
3
Max
50
375
150
3.9
±150
Unit
V
T
j
= 25°C
T
j
= 125°C
I
DSS
Zero Gate Voltage Drain Current
μA
R
DS(on)
V
GS(th)
I
GSS
Dynamic Characteristics
Symbol Characteristic
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Q
g
Total gate Charge
Q
gs
Gate – Source Charge
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
m
V
nA
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
Min
Typ
4507
2092
108
180
Max
Unit
pF
22
Q
gd
Gate – Drain Charge
V
GS
= 10V
V
Bus
= 400V
I
D
= 28A
90
nC
T
d(on)
T
r
T
d(off)
T
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
10
13
83
35
Inductive switching @125°C
V
GS
= 15V
V
Bus
= 533V
I
D
= 28A
R
G
= 2.5
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 533V
I
D
= 28A,
R
G
= 2.5
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 533V
I
D
= 28A,
R
G
= 2.5
ns
E
on
Turn-on Switching Energy
X
486
E
off
Turn-off Switching Energy
Y
278
μJ
E
on
Turn-on Switching Energy
X
850
E
off
Turn-off Switching Energy
Y
342
μJ
Diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
Test Conditions
Min
1000
Typ
60
1.9
2.2
1.7
Max
250
500
2.5
Unit
V
T
j
= 25°C
T
j
= 125°C
T
c
= 100°C
I
RM
Maximum Reverse Leakage Current
V
R
=1000V
μA
I
F(AV)
Maximum Average Forward Current
50% duty cycle
I
F
= 60A
I
F
= 120A
I
F
= 60A
A
V
F
Diode Forward Voltage
T
j
= 125°C
V
T
j
= 25°C
280
t
rr
Reverse Recovery Time
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
350
ns
760
3600
Q
rr
Reverse Recovery Charge
I
F
= 60A
V
R
= 667V
di/dt=200A/μs
nC
X
E
on
includes diode reverse recovery.
Y
In accordance with JEDEC standard JESD24-1.
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