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參數(shù)資料
| 型號(hào)： | APTC80AM75SC |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module |
| 中文描述： | 相腳系列 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 315K |
| 代理商： | APTC80AM75SC |
APTC80AM75SC
A
APT website – http://www.advancedpower.com
2 – 7
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BV
DSS
Drain - Source Breakdown Voltage
Test Conditions
V
GS
= 0V, I
D
= 1000μA
V
GS
= 0V,V
DS
= 800V
V
GS
= 0V,V
DS
= 800V
V
GS
= 10V, I
D
= 28A
V
GS
= V
DS
, I
D
= 4mA
V
GS
= ±20
V, V
DS
= 0V
Min
800
2.1
Typ
3
Max
100
1000
75
3.9
±200
Unit
V
T
j
= 25°C
T
j
= 125°C
I
DSS
Zero Gate Voltage Drain Current
μA
R
DS(on)
V
GS(th)
I
GSS
Dynamic Characteristics
Symbol Characteristic
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Q
g
Total gate Charge
Q
gs
Gate – Source Charge
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
m
V
nA
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
Min
Typ
9015
4183
215
364
Max
Unit
pF
48
Q
gd
Gate – Drain Charge
V
GS
= 10V
V
Bus
= 400V
I
D
= 56A
184
nC
T
d(on)
T
r
T
d(off)
T
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
10
13
83
35
Inductive switching @ 125°C
V
GS
= 15V
V
Bus
= 553V
I
D
= 56A
R
G
= 1.2
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 533V
I
D
= 56A,
R
G
= 1.2
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 533V
I
D
= 56A,
R
G
= 1.2
ns
E
on
Turn-on Switching Energy
583
E
off
Turn-off Switching Energy
556
μJ
E
on
Turn-on Switching Energy
1020
E
off
Turn-off Switching Energy
684
μJ
Series diode ratings and characteristics
Symbol Characteristic
I
F(AV)
Maximum Average Forward Current
Test Conditions
50% duty cycle
I
F
= 60A
I
F
= 120A
I
F
= 60A
I
F
= 60A
V
R
= 133V
di/dt = 400A/μs
I
F
= 60A
V
R
= 133V
di/dt = 400A/μs
Min
Typ
60
1.1
1.4
0.9
Max
1.15
Unit
A
T
c
= 85°C
V
F
Diode Forward Voltage
T
j
= 125°C
V
T
j
= 25°C
24
t
rr
Reverse Recovery Time
T
j
= 125°C
T
j
= 25°C
48
ns
66
Q
rr
Reverse Recovery Charge
T
j
= 125°C
300
nC
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