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參數(shù)資料
| 型號(hào)： | APTC60HM70T3 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Full - Bridge Super Junction MOSFET Power Module |
| 中文描述： | 全-橋超級(jí)結(jié)MOSFET的功率模塊 |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大?。?/td> | 346K |
| 代理商： | APTC60HM70T3 |
APTC60HM35T3
A
APT website – http://www.advancedpower.com
6 - 6
T
J
=25°C
T
J
=150°C
1
10
100
1000
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, Source to Drain Voltage (V)
I
D
,
Source to Drain Diode Forward Voltage
Delay Times vs Current
td(on)
td(off)
0
50
100
150
200
250
300
350
0
20
40
60
80
100
120
I
D
, Drain Current (A)
t
d
d
V
DS
=400V
R
G
=2.5
T
J
=125°C
L=100μH
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
100
120
0
20
40
60
80
100
120
I
D
, Drain Current (A)
t
r
f
V
DS
=400V
R
G
=2.5
T
J
=125°C
L=100μH
Switching Energy vs Current
E
on
E
off
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
20
40
60
80
100
120
I
D
, Drain Current (A)
S
V
DS
=400V
R
G
=2.5
T
J
=125°C
L=100μH
E
on
E
off
0
2
4
6
8
10
0
5
Gate Resistance (Ohms)
10
15
20
25
S
Switching Energy vs Gate Resistance
V
DS
=400V
I
D
=72A
T
J
=125°C
L=100μH
hard
switching
ZCS
ZVS
0
20
40
60
80
100
120
140
15 20 25 30 35 40 45 50 55 60 65
I
D
, Drain Current (A)
F
Operating Frequency vs Drain Current
V
DS
=400V
D=50%
R
G
=2.5
T
J
=125°C
T
C
=75°C
“COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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