參數(shù)資料
型號(hào)： APTC60HM70T1G
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： JFETs
英文描述： 39 A, 600 V, 0.07 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, SP1, 12 PIN
文件頁數(shù)： 1/6頁
文件大小： 324K
代理商： APTC60HM70T1G
APTC60HM70T1G
APT
C
60HM70T1G
–
Re
v0
A
ugus
t,200
7
www.microsemi.com
1 – 6
79
1
4
NTC
11
810
12
3
6
Q1
Q2
5
Q4
Q3
2
Pins 3/4 must be shorted together
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
600
V
Tc = 25°C
39
ID
Continuous Drain Current
Tc = 80°C
29
IDM
Pulsed Drain current
160
A
VGS
Gate - Source Voltage
±20
V
RDSon
Drain - Source ON Resistance
70
m
PD
Maximum Power Dissipation
Tc = 25°C
250
W
IAR
Avalanche current (repetitive and non repetitive)
20
A
EAR
Repetitive Avalanche Energy
1
EAS
Single Pulse Avalanche Energy
1800
mJ
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
-
Very rugged
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
RoHS Compliant
Full - Bridge
Super Junction MOSFET
Power Module
VDSS = 600V
RDSon = 70m max @ Tj = 25°C
ID = 39A @ Tc = 25°C
相關(guān)PDF資料
PDF描述
APTC60SKM35T1G 72 A, 600 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
APTC80DA15T1G 28 A, 800 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
APTC80TA15P 28 A, 800 V, 0.15 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTC80TA15P 28 A, 800 V, 0.15 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTC90DAM60CT1G 59 A, 900 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTC60HM70T3 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge Super Junction MOSFET Power Module
APTC60HM70T3G 功能描述:MOSFET PWR MOD FULL BRIDGE SP3 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:*
APTC60HM83FT2G 功能描述:MOSFET N CH 600V 36A RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:CoolMOS™ 標(biāo)準(zhǔn)包裝:10 系列:*
APTC60HM991G 制造商:Microsemi Corporation 功能描述:
APTC60SKM24CT1G 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:Microsemi APTC60SKM24CT1G MOSFETs 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V 95A SP1 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*