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參數(shù)資料
| 型號： | APTC60HM35T3 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Full - Bridge Super Junction MOSFET Power Module |
| 中文描述： | 全-橋超級結MOSFET的功率模塊 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 346K |
| 代理商： | APTC60HM35T3 |
APTC60HM35T3
A
APT website – http://www.advancedpower.com
2 - 6
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BV
DSS
Drain - Source Breakdown Voltage
Test Conditions
V
GS
= 0V, I
D
= 375μA
V
GS
= 0V,V
DS
= 600V
V
GS
= 0V,V
DS
= 600V
V
GS
= 10V, I
D
= 72A
V
GS
= V
DS
, I
D
= 5.4mA
V
GS
= ±20
V, V
DS
= 0V
Min
600
2.1
Typ
1
3
Max
40
375
35
3.9
±150
Unit
V
T
j
= 25°C
T
j
= 125°C
I
DSS
Zero Gate Voltage Drain Current
μA
R
DS(on)
V
GS(th)
I
GSS
Dynamic Characteristics
Symbol Characteristic
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Q
g
Total gate Charge
Q
gs
Gate – Source Charge
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
m
V
nA
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
Min
Typ
14
5.13
0.42
518
Max
Unit
nF
58
Q
gd
Gate – Drain Charge
V
GS
= 10V
V
Bus
= 300V
I
D
= 72A
222
nC
T
d(on)
T
r
T
d(off)
T
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
21
30
283
Fall Time
Inductive Switching @ 125°C
V
GS
= 15V
V
Bus
= 400V
I
D
= 72A
R
G
= 2.5
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 400V
I
D
= 72A,
R
G
= 2.5
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 400V
I
D
= 72A,
R
G
= 2.5
84
ns
E
on
Turn-on Switching Energy
X
1340
E
off
Turn-off Switching Energy
Y
1960
μJ
E
on
Turn-on Switching Energy
X
2192
E
off
Turn-off Switching Energy
Y
2412
μJ
Source - Drain diode ratings and characteristics
Symbol Characteristic
I
S
Continuous Source current
(Body diode)
V
SD
Diode Forward Voltage
dv/dt
Peak Diode Recovery
Z
t
rr
Reverse Recovery Time
Test Conditions
Min
Typ
72
54
580
Max
1.2
6
Unit
Tc = 25°C
Tc = 80°C
A
V
GS
= 0V, I
S
= - 72A
I
S
= - 72A
V
R
= 350V
di
S
/dt = 200A/μs
V
V/ns
ns
T
j
= 25°C
Q
rr
Reverse Recovery Charge
T
j
= 25°C
46
μC
X
E
on
includes diode reverse recovery.
Y
In accordance with JEDEC standard JESD24-1.
Z
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
I
S
≤
- 72A di/dt
≤
200A/μs V
R
≤
V
DSS
T
j
≤
150°C
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