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參數(shù)資料
| 型號(hào)： | APTC60DSKM70T3 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Dual buck chopper Super Junction MOSFET Power Module |
| 中文描述： | 雙降壓斬波超級(jí)結(jié)MOSFET的功率模塊 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 347K |
| 代理商： | APTC60DSKM70T3 |
APTC60DSKM70T3
A
APT website – http://www.advancedpower.com
2 - 6
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BV
DSS
Drain - Source Breakdown Voltage
V
GS
= 0V, I
D
= 250μA
V
GS
= 0V,V
DS
= 600V
V
GS
= 0V,V
DS
= 600V
V
GS
= 10V, I
D
= 39A
V
GS
= V
DS
, I
D
= 2.7mA
V
GS
= ±20
V, V
DS
= 0V
600
2.1
V
T
j
= 25°C
T
j
= 125°C
0.5
3
25
250
70
3.9
±100
I
DSS
Zero Gate Voltage Drain Current
μA
R
DS(on)
V
GS(th)
I
GSS
Dynamic Characteristics
Symbol Characteristic
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Q
g
Total gate Charge
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
m
V
nA
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
Min
Typ
7
2.56
0.21
259
Max
Unit
nF
Q
gs
Gate – Source Charge
29
Q
gd
Gate – Drain Charge
V
GS
= 10V
V
Bus
= 300V
I
D
= 39A
111
nC
T
d(on)
T
r
T
d(off)
T
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
21
30
283
Fall Time
Inductive Switching @ 125°C
V
GS
= 15V
V
Bus
= 400V
I
D
= 39A
R
G
= 5
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 400V
I
D
= 39A,
R
G
= 5
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 400V
I
D
= 39A,
R
G
= 5
84
ns
E
on
Turn-on Switching Energy
X
670
E
off
Turn-off Switching Energy
Y
980
μJ
E
on
Turn-on Switching Energy
X
1096
E
off
Turn-off Switching Energy
Y
1206
μJ
Diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
Test Conditions
Min
600
Typ
30
2.2
2.7
1.5
Max
250
750
2.7
Unit
V
T
j
= 25°C
T
j
= 125°C
T
c
= 70°C
I
RM
Maximum Reverse Leakage Current
V
R
=600V
μA
I
F(AV)
Maximum Average Forward Current
50% duty cycle
I
F
= 30A
I
F
= 60A
I
F
= 30A
A
V
F
Diode Forward Voltage
T
j
= 150°C
V
T
j
= 25°C
74
t
rr
Reverse Recovery Time
T
j
= 100°C
T
j
= 25°C
T
j
= 100°C
74
ns
123
288
Q
rr
Reverse Recovery Charge
I
F
= 30A
V
R
= 400V
di/dt=200A/μs
nC
X
E
on
includes diode reverse recovery.
Y
In accordance with JEDEC standard JESD24-1.
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