參數(shù)資料
型號(hào)： APTC60DDAM35T3
廠商： Advanced Power Technology Ltd.
英文描述： Dual boost chopper Super Junction MOSFET Power Module
中文描述： 雙升壓斬波器超結(jié)MOSFET的功率模塊
文件頁數(shù)： 2/6頁
文件大?。?/td> 346K
代理商： APTC60DDAM35T3
APTC60DDAM35T3
A
APT website – http://www.advancedpower.com
2 - 6
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BV
DSS
Drain - Source Breakdown Voltage
Test Conditions
V
GS
= 0V, I
D
= 375μA
V
GS
= 0V,V
DS
= 600V
V
GS
= 0V,V
DS
= 600V
V
GS
= 10V, I
D
= 72A
V
GS
= V
DS
, I
D
= 5.4mA
V
GS
= ±20
V, V
DS
= 0V
Min
600
2.1
Typ
1
3
Max
40
375
35
3.9
±150
Unit
V
T
j
= 25°C
T
j
= 125°C
I
DSS
Zero Gate Voltage Drain Current
μA
R
DS(on)
V
GS(th)
I
GSS
Dynamic Characteristics
Symbol Characteristic
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Q
g
Total gate Charge
Q
gs
Gate – Source Charge
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
m
V
nA
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
Min
Typ
14
5.13
0.42
518
Max
Unit
nF
58
Q
gd
Gate – Drain Charge
V
GS
= 10V
V
Bus
= 300V
I
D
= 72A
222
nC
T
d(on)
T
r
T
d(off)
T
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
21
30
283
Fall Time
Inductive Switching @ 125°C
V
GS
= 15V
V
Bus
= 400V
I
D
= 72A
R
G
= 2.5
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 400V
I
D
= 72A,
R
G
= 2.5
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 400V
I
D
= 72A,
R
G
= 2.5
84
ns
E
on
Turn-on Switching Energy
X
1340
E
off
Turn-off Switching Energy
Y
1960
μJ
E
on
Turn-on Switching Energy
X
2192
E
off
Turn-off Switching Energy
Y
2412
μJ
Chopper diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
Test Conditions
Min
600
Typ
60
2.2
2.3
1.4
Max
250
750
2.7
Unit
V
T
j
= 25°C
T
j
= 125°C
T
c
= 70°C
I
RM
Maximum Reverse Leakage Current
V
R
=600V
μA
I
F(AV)
Maximum Average Forward Current
50% duty cycle
I
F
= 60A
I
F
= 120A
I
F
= 60A
A
V
F
Diode Forward Voltage
T
j
= 125°C
V
T
j
= 25°C
55
t
rr
Reverse Recovery Time
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
151
ns
121
999
Q
rr
Reverse Recovery Charge
I
F
= 60A
V
R
= 400V
di/dt=200A/μs
nC
X
E
on
includes diode reverse recovery.
Y
In accordance with JEDEC standard JESD24-1.
相關(guān)PDF資料
PDF描述
APTC60DSKM35T3 Dual buck chopper Super Junction MOSFET Power Module
APTC60DSKM70T3 Dual buck chopper Super Junction MOSFET Power Module
APTC60HM70SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module
APTC60HM70T3 Full - Bridge Super Junction MOSFET Power Module
APTC60HM35T3 Full - Bridge Super Junction MOSFET Power Module
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTC60DDAM35T3G 功能描述:MOSFET MOD BOOST CHOPPER SP3 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:*
APTC60DDAM45CT1G 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V 49A SP1 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR
APTC60DDAM45T1G 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V 49A SP1 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES
APTC60DDAM70CT1G 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 500V 39A SP1 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR
APTC60DDAM70T1G 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V SP1 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*