參數(shù)資料
型號： APT94N60L2C3
廠商： Advanced Power Technology Ltd.
英文描述： Super Junction MOSFET
中文描述： 超級結(jié)MOSFET的
文件頁數(shù)： 2/5頁
文件大小： 180K
代理商： APT94N60L2C3
DYNAMIC CHARACTERISTICS
APT94N60L2C3
0
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θ
JC + TC
t1
t2
P
SINGLE PULSE
Z
θ
J
,
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0.5
0.1
0.05
0.3
0.7
0.9
UNIT
Amps
Volts
ns
μC
V/ns
MIN
TYP
MAX
94
282
1.2
1
861
46
6
Symbol
R
θ
JC
R
θ
JA
MIN
TYP
MAX
0.15
62
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv
/
dt
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
6
Turn-off Switching Energy
Turn-on Switching Energy
6
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f
= 1 MHz
V
GS
= 10V
V
DD
= 300V
I
D
= 94A
@ 25°C
RESISTIVE SWITCHING
V
GS
=
13V
V
DD
=
380V
I
D
=
94A
@ 125°C
R
G
=
0.9
INDUCTIVE SWITCHING @ 25°C
V
DD
=
400V, V
GS
= 15V
I
D
=
94A, R
G
=
5
INDUCTIVE SWITCHING @ 125°C
V
DD
=
400V V
GS
= 15V
I
D
=
94A, R
G
=
5
MIN
TYP
MAX
13600
4400
290
505
48
640
240
18
27
110
165
8
12
2040
3515
2920
3970
UNIT
pF
nC
ns
μ
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
THERMAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T
j
=
+25°C, L = 36.0mH, R
G
=
25
, Peak I
L
= 10A
5
dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself.
I
≤
-
I
94A
di
/
dt
≤
700A/μs
V
≤
V
T
≤
150
°
C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
calculated as
P
AV
=E
AR
*f
APT Reserves the right to change, without notice, the specifications and information contained herein.
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -
94A
)
Reverse Recovery Time (I
S
= -
94A
, dl
S
/dt = 100A/μs, V
R
= 350V)
Reverse Recovery Charge (I
S
= -
94A
, dl
S
/dt = 100A/μs, V
R
= 350V)
Peak Diode Recovery
dv
/
dt 5
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT94N60L2C3G 功能描述:MOSFET N-CH 600V 94A TO264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT94N65B2C3 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Super Junction MOSFET
APT94N65B2C3_11 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Super Junction MOSFET
APT94N65B2C3G 功能描述:MOSFET N-CH 650V 94A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:CoolMOS™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT94N65B2C6 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 650V 95A T-MAX
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