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參數(shù)資料
| 型號： | APT8090BN |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| 中文描述： | N溝道增強(qiáng)型高壓功率MOSFET |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 49K |
| 代理商： | APT8090BN |
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
I
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
, CASE TEMPERATURE (
°
C)
T
, JUNCTION TEMPERATURE (
°
C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
T
, JUNCTION TEMPERATURE (
°
C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
T
, CASE TEMPERATURE (
°
C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
D
(
I
D
,
I
D
,
I
D
,
(
V
G
(
B
D
(
R
D
(
I
D
,
(
V
0
μ
SEC. PULSE TEST
VD230
2.5
20
00
2
4
6
8
8
16
12
0.7
0.9
0.8
1.0
1.1
1.2
0
25
50
75
100
125
150
0.0
2.5
2.0
1.5
1.0
0.5
2.0
1.5
1.0
0.5
0.0
4
8
16
12
4
0.6
0.4
1.4
0.8
1.0
1.2
0
TJ = -55
°
C
TJ = +25
°
C
TJ = +125
°
C
TJ = +125
°
C
TJ = +25
°
C
TJ = -55
°
C
2
4
6
8
10
12
4.5V
4V
5V
5.5V
6V
16
8
0
0
4
12
-50 -25 0 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150
VGS=10V
VGS=20V
0
10 20 30
40
4
8
12
16
APT8090BN
APT8075BN
0
50
100
150
2 0 0
2 5 0
VGS=6V &10V
4V
4.5V
5V
5.5V
VGS=10V
APT8075/8090BN
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
T
= 25
°
C
2
μ
SEC. PULSE TEST
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
Page 146
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| APT8075 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT8090BNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 12A I(D) | TO-247AD |
| APT8090HN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 10.5A I(D) | TO-258ISO |
| APT80F60J | 功能描述:MOSFET N-CH 600V 84A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 8™ 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT80F60J_11 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-Channel FREDFET |
| APT80GA60B | 功能描述:IGBT 600V 143A 625W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
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