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參數(shù)資料
| 型號： | APT8067HVR |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| 中文描述： | 電源MOS V是一個高電壓N新一代通道增強(qiáng)型功率MOSFET。 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 60K |
| 代理商： | APT8067HVR |
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
, CASE TEMPERATURE (
°
C)
T
, JUNCTION TEMPERATURE (
°
C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
D
(
-50
-25
0
25
50
T
, JUNCTION TEMPERATURE (
°
C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
T
, CASE TEMPERATURE (
°
C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
I
D
,
I
D
,
I
D
,
(
V
G
(
B
D
,
R
D
(
I
D
,
(
V
APT8067HVR
0
0
100
200
300
400
0
2
4
6
8
10
12
0
2
4
6
8
0
5
10
15
20
25
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125 150
75
100
125 150
-50
-25
0
25
50
75
100
125
150
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
16
12
8
4
0
1.3
1.2
1.1
1.0
0.9
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
16
12
8
4
0
30
24
18
12
6
0
12
10
8
6
4
2
0
2.5
2.0
1.5
1.0
0.5
0.0
VD250
μ
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
4.5V
4V
VGS=5V, 5.5V, 6V, 7V, 10V & 15V
4.5V
4V
VGS=10V
VGS=20V
TJ = -55
°
C
TJ = +125
°
C
TJ = +25
°
C
TJ = -55
°
C
VGS=6V, 7V, 10V & 15V
VGS=5V & 5.5V
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
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