參數(shù)資料
型號(hào)： APT8030JN
廠商： Advanced Power Technology Ltd.
英文描述： N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
中文描述： N溝道增強(qiáng)型高壓功率MOSFET
文件頁(yè)數(shù)： 4/4頁(yè)
文件大小： 62K
代理商： APT8030JN
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
V
G
,
I
D
,
I
D
,
C
1
5
10
50 100
800
.01
.1
1
10
50
0
100
200
300
400
500
600
0
0.4
0.8
1.2
1.6
2.0
APT8030LVFR
TC =+25
°
C
TJ =+150
°
C
SINGLE PULSE
200
100
50
10
5
1
.5
.1
20
16
12
8
4
0
0
OPERATION HERE
LIMITED BY R
DS
(ON)
TJ =+150
°
C
TJ =+25
°
C
Crss
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
5,256,583
Coss
Ciss
30,000
10,000
5,000
1,000
500
100
200
100
50
10
5
1
VDS=250V
VDS=100V
VDS=400V
I
D
= I
D
[Cont.]
TO-264 Package Outline
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
3.00 (.118)
0.48 (.019)
2.59 (.102)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
D
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
5.45 (.215) BSC
2-Plcs.
10
μ
S
1mS
10mS
100mS
DC
100
μ
S
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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