參數(shù)資料
型號： APT8018JN
廠商： Advanced Power Technology Ltd.
英文描述： N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
中文描述： N溝道增強(qiáng)型高壓功率MOSFET
文件頁數(shù)： 4/4頁
文件大?。?/td> 60K
代理商： APT8018JN
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
V
G
,
I
D
,
I
D
,
C
50,000
10,000
5,000
1,000
500
100
400
100
50
10
5
1
1
5
10
50 100
800
.1
.5
1
5
10
50
0
200
400
600
800
1000
0
0.4
0.8
1.2
1.6
2.0
APT8018JN
TC =+25
°
C
TJ =+150
°
C
SINGLE PULSE
200
100
50
10
5
1
.5
.1
20
16
12
8
4
0
I
D
= I
D
[Cont.]
OPERATION HERE
LIMITED BY R
DS
(ON)
10
μ
S
100
μ
S
1mS
10mS
100mS
DC
Crss
Coss
Ciss
TJ =+150
°
C
TJ =+25
°
C
TJ =-55
°
C
VDS=80V
VDS=160V
VDS=400V
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
Dimensions in Millimeters and (Inches)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
SOT-227 (ISOTOP
) Package Outline
ISOTOP
is a Registered Trademark of SGS Thomson.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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