參數(shù)資料
型號(hào): APT75GP120J
廠商: Advanced Power Technology Ltd.
英文描述: POWER MOS 7 IGBT
中文描述: IGBT的功率MOS 7
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 113K
代理商: APT75GP120J
0
APT75GP120J
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
RBSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 600V
I
C
= 75A
T
J
= 150°C, R
G
= 5
,
V
GE
=
15V, L = 100μH,V
CE
= 960V
Inductive Switching (25°C)
V
CC
= 600V
V
GE
= 15V
I
C
= 75A
R
G
= 5
T
J
= +25°C
Inductive Switching (125°C)
V
CC
= 600V
V
GE
= 15V
I
C
= 75A
R
G
= 5
T
J
= +125°C
MIN
TYP
MAX
7035
460
80
7.5
320
50
140
300
20
40
163
56
1620
4100
2500
20
40
244
115
1620
5850
4820
UNIT
pF
V
nC
A
ns
μ
J
ns
μ
J
UNIT
°C/W
gm
MIN
TYP
MAX
.23
N/A
29.2
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
R
Θ
JC
R
Θ
JC
W
T
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
THERMAL AND MECHANICAL CHARACTERISTICS
2 For Combi devices, I
ces
includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the E
on2
test circuit. (See Figures 21, 22.)
6 E
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Reverse Bias Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
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