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參數(shù)資料
| 型號： | APT75GN120JDQ3 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | IGBT |
| 中文描述： | IGBT的 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大小： | 458K |
| 代理商： | APT75GN120JDQ3 |
0
APT75GN120JDQ3
TYPICAL PERFORMANCE CURVES
Characteristic / Test Conditions
Maximum Average Forward Current (T
C
= 85°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J
= 45°C, 8.3ms)
Symbol
I
F
(AV)
I
F
(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F
= 75A
I
F
= 150A
I
F
= 75A, T
J
= 125°C
Forward Voltage
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
2.8
3.48
2.17
APT75GN120JDQ3
60
73
540
DYNAMIC CHARACTERISTICS
Characteristic
Symbol
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN
TYP
MAX
-
-
60
-
265
-
560
-
5
-
-
350
-
2890
-
13
-
-
150
-
4720
-
-
40
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F
= 60A, di
F
/dt = -200A/
μ
s
V
R
= 800V, T
C
= 25
°
C
I
F
= 60A, di
F
/dt = -200A/
μ
s
V
R
= 800V, T
C
= 125
°
C
I
F
= 60A, di
F
/dt = -1000A/
μ
s
V
R
= 800V, T
C
= 125
°
C
I
F
= 1A, di
F
/dt = -100A/
μ
s, V
R
= 30V, T
J
= 25
°
C
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL
Z
θ
J
,
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.60
0.50
0.40
0.30
0.20
0.10
0
0.5
SINGLE PULSE
0.1
0.05
0.3
0.7
D = 0.9
Peak T
J
= P
DM
x Z
θ
JC + TC
Duty Factor D =
t1
/
t2
t2
t1
P
D
Note:
0.148
0.238
0.174
0.006
0.0910
0.524
Power
(watts)
Junction
°
C)
RC MODEL
Case temperature. (
°
C)
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| APT75GN120JR | 制造商:Microsemi Corporation 功能描述: |
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| APT75GN120LG | 功能描述:IGBT 1200V 200A 833W TO264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT75GN60B | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:IGBT |
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