參數(shù)資料
型號: APT75GN120B2G
廠商: Advanced Power Technology Ltd.
英文描述: IGBT
中文描述: IGBT的
文件頁數(shù): 4/6頁
文件大?。?/td> 412K
代理商: APT75GN120B2G
0
APT75GN120B2_L(G)
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
V
CE
=
800V
R
=
1.0
L = 100μH
E
O
,
t
r
R
t
d
,
FIGURE 15, Switching Energy Losses vs. Gate Resistance
E
O
,
t
f
F
t
d
(
,
FIGURE 16, Switching Energy Losses vs Junction Temperature
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
, GATE RESISTANCE (OHMS)
T
, JUNCTION TEMPERATURE (°C)
V
CE
= 800V
V
GE
= +15V
R
G
= 1.0
R
G
=
1.0
, L
=
100
μ
H, V
CE
=
800V
V
CE
= 800V
T
J
= 25°C
,
or
=125°C
R
= 1.0
L = 100μH
10
40
70
60
50
40
30
20
10
0
180
160
140
120
100
80
60
40
20
0
50000
40000
30000
20000
10000
0
100000
80000
60000
40000
20000
0
800
700
600
500
400
300
200
100
0
300
250
200
150
100
50
0
25000
20000
15000
10000
5000
0
50000
40000
30000
20000
10000
0
V
GE
= 15V
T
J
=
125°C, V
GE
=
15V
T
J
=
25 or 125°C,V
GE
=
15V
T
J
=
25°C, V
GE
=
15V
T
J
=
125°C
T
J
=
25°C
V
CE
= 800V
V
GE
= +15V
R
G
= 1.0
T
J
=
125°C
T
J
=
25°C
V
CE
= 800V
V
GE
= +15V
R
G
= 1.0
70
100
130
160
10
40
70
100
130
160
10
40
70
100
130
160
10
40
70
100
130
160
10
40
70
100
130
160
10
40
70
100
130
160
0
10
20
30
40
50
0
25
50
75
100
125
R
G
=
1.0
, L
=
100
μ
H, V
CE
=
800V
E
on2,
150A
E
off,
150A
V
CE
= 800V
V
GE
= +15V
T
J
= 125°C
E
on2,
75A
E
off,
75A
E
on2,
37.5A
E
off,
37.5A
E
on2,
150A
E
off,
150A
E
on2,
75A
E
off,
75A
E
on2,
37.5A
E
off,
37.5A
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APT75GN120JR 制造商:Microsemi Corporation 功能描述:
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