參數(shù)資料
型號： APT65GP60B2G
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： IGBT 晶體管
英文描述： 100 A, 600 V, N-CHANNEL IGBT
封裝： TMAX-3
文件頁數(shù)： 4/6頁
文件大?。?/td> 91K
代理商： APT65GP60B2G
050-7438
Rev
A
4-2003
APT65GP60B2
TYPICAL PERFORMANCE CURVES
T
J
= 125°C, VGE = 10V or 15V
T
J
= 25°C, VGE = 10V or 15V
VCE = 400V
RG = 5
L = 100 H
V
GE =
15V,TJ=125°C
VGE= 15V
VGE= 10V
V
GE
=10V,TJ=125°C
V
GE =
10V,TJ=25°C
V
GE =
15V,TJ=25°C
T
J
= 25°C, VGE = 10V or 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
R
G
=5
, L = 100H, V
CE = 400V
R
G
=5
, L = 100H, V
CE = 400V
VCE = 400V
L = 100 H
RG = 5
T
J
= 25 or 125°C,VGE = 15V
T
J
= 25 or 125°C,VGE = 10V
VCE = 400V
VGE = +15V
RG = 5
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
VCE = 400V
VGE = +15V
T
J = 125°C
VCE = 400V
L = 100 H
RG = 5
TJ =125°C, VGE=15V
T
J
= 125°C, VGE = 10V or 15V
TJ =125°C,VGE=10V
TJ = 25°C, VGE=10V
TJ = 25°C, VGE=15V
10
30
50
70
90
110
130
10
30
50
70
90
110
130
10
30
50
70
90
110
130
10
30
50
70
90
110
130
10
30
50
70
90
110
130
10
30
50
70
90
110
130
0
10
20
30
40
50
-50
-25
0
25
50
75
100
125
60
50
40
30
20
10
0
160
140
120
100
80
60
40
20
0
6000
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
160
140
120
100
80
60
40
20
0
140
120
100
80
60
40
20
0
5000
4000
3000
2000
1000
0
6000
5000
4000
3000
2000
1000
0
Eoff 130A
Eon2 130A
Eon2 32.5A
Eoff 65A
Eon2 65A
Eoff32.5A
Eon2 32.5A
Eoff 65A
Eon2 65A
Eon2 130A
Eoff 130A
Eoff 32.5A
VCE = 400V
TJ = 25°C or 125°C
RG = 5
L = 100 H
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT65GP60J 功能描述:IGBT 600V 130A 431W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APT65GP60JDQ2 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APT65GP60L2DF2 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT
APT65GP60L2DQ2 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT
APT65GP60L2DQ2G 功能描述:IGBT 600V 198A 833W TO264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
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