參數(shù)資料
型號: APT60M75JVFR
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 62 A, 600 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ISOTOP-4
文件頁數(shù): 2/4頁
文件大?。?/td> 948K
代理商: APT60M75JVFR
DYNAMIC CHARACTERISTICS
APT60M75JVFR
050-7267
Rev
A
2-200
6
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 1.87mH, RG = 25, Peak IL = 62A
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
5 IS ID = 62A, di/dt = 100A/s, Tj 150°C, RG = 2.0 VR = 600V.
APT Reserves the right to change, without notice, the specifications and information contained herein.
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = - 62A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -62A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -62A, di/dt = 100A/s)
Peak Recovery Current
(IS = -62A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
t r
td(off)
tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 300V
ID = 62A @ 25°C
VGS = 15V
VDD = 300V
ID = 62A @ 25°C
RG = 0.6
MIN
TYP
MAX
16500
19800
1900
2660
750
1125
700
1050
80
120
330
495
20
40
20
40
80
120
12
24
UNIT
pF
nC
ns
MIN
TYP
MAX
62
248
1.3
15
Tj = 25°C
300
Tj = 125°C
600
Tj = 25°C
1.8
Tj = 125°C
7.4
Tj = 25°C
16
Tj = 125°C
30
THERMAL/PACKAGECHARACTERISTICS
Symbol
RθJC
RθJA
VIsolation
Torque
MIN
TYP
MAX
0.18
40
2500
10
UNIT
°C/W
Volts
lbin
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
0.2
0.1
0.05
0.01
0.005
0.001
0.0005
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
相關(guān)PDF資料
PDF描述
APT60M75JVFR 62 A, 600 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
APT60M75JVR 62 A, 600 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
APT60M75JVR 62 A, 600 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
APT60M80JVR 55 A, 600 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
APT60M80JVR 55 A, 600 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT60M75JVR 功能描述:MOSFET N-CH 600V 62A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:*
APT60M75L2FLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT60M75L2FLL_04 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 R FREDFET
APT60M75L2FLLG 功能描述:MOSFET N-CH 600V 73A TO-264MAX RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT60M75L2LL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.