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參數(shù)資料
| 型號： | APT60M75JLL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 58 A, 600 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 163K |
| 代理商： | APT60M75JLL |
APT60M75JLL
050-7099
Rev
B
9-2004
1mS
100S
TC=+25°C
TJ=+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100
600
0
10
20
30
40
50
0
50
100
150
200
250
300
0.3
0.5
0.7
0.9
1.1
1.3
1.5
232
100
50
10
1
16
12
8
4
0
VDS=300V
VDS=120V
VDS=480V
I
D = 58A
TJ=+150°C
TJ=+25°C
Crss
Ciss
Coss
10mS
20,000
10,000
1,000
100
10
200
100
10
1
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 400V
R
G = 5
T
J = 125°C
L = 100H
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
E
on
and
E
off
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t rand
t
f
(ns)
10
30
50
70
90
110
130
10
30
50
70
90
110
130
10
30
50
70
90
110
130
0
5
10 15 20 25 30
35 40 45 50
V
DD = 400V
R
G = 5
T
J = 125°C
L = 100H
V
DD = 400V
R
G = 5
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery
V
DD = 400V
I
D = 58A
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery
180
160
140
120
100
80
60
40
20
0
6000
5000
4000
3000
2000
1000
0
160
140
120
100
80
60
40
20
0
5000
4000
3000
2000
1000
0
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