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參數(shù)資料
| 型號： | APT60M75JLL |
| 元件分類： | JFETs |
| 英文描述： | 58 A, 600 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 163K |
| 代理商： | APT60M75JLL |
050-7099
Rev
B
9-2004
APT60M75JLL
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
Drain Current
DrainVoltage
GateVoltage
Switching Energy
10%
t
d(on)
90%
5%
t
r
5%
10%
ID
D.U.T.
VDS
Figure 20, Inductive Switching Test Circuit
VDD
G
APT60DF60
Switching Energy
Drain Current
DrainVoltage
GateVoltage
10%
0
t
d(off)
90%
t
f
90%
SOT-227 (ISOTOP) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
ISOTOPis a Registered Trademark of SGS Thomson.
T
J125°C
T
J125°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT60M75JLL | 58 A, 600 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT60M75JVFR | 62 A, 600 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT60M75JVFR | 62 A, 600 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT60M75JVR | 62 A, 600 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT60M75JVR | 62 A, 600 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT60M75JLL_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 R MOSFET |
| APT60M75JVFR | 功能描述:MOSFET N-CH 600V 62A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT60M75JVR | 功能描述:MOSFET N-CH 600V 62A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT60M75L2FLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT60M75L2FLL_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 R FREDFET |
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