參數(shù)資料
型號(hào)： APT60GF60JU3
廠商： Advanced Power Technology Ltd.
英文描述： ISOTOP Buck chopper NPT IGBT
中文描述： 1000V的集電極IGBT的降壓斬波器不擴(kuò)散核武器條約
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 535K
代理商： APT60GF60JU3
APT60GF60JU3
A
APT website – http://www.advancedpower.com
2 - 8
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
Test Conditions
V
GE
= 0V, I
C
= 0.5mA
V
GE
= 0V
V
CE
= 600V
V
GE
=15V
I
C
= 60A
V
GE
= V
CE
, I
C
= 500μA
V
GE
= ±20V, V
CE
= 0V
Min
600
3
Typ
2.0
4
Max
80
2000
2.5
2.8
5
±100
Unit
V
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
CES
Zero Gate Voltage Collector Current
μA
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Q
g
Total gate Charge
Q
ge
Gate – Emitter Charge
Q
gc
Gate – Collector Charge
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
ts
Total switching Losses
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
on
Turn-on Switching Energy
E
off
Turn-off Switching Energy
E
ts
Total switching Losses
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Min
Typ
3125 3590
310
180
257
19
120
20
95
315
245
26
63
395
68
3.4
25
59
430
65
1.6
2.4
4.0
Max
Unit
450
310
410
30
180
40
190
470
490
50
125
590
140
7
50
120
650
130
3.2
4.8
8.0
pF
V
GS
= 15V
V
Bus
= 300V
I
C
= 60A
nC
Resistive Switching (25°C)
V
GE
= 15V
V
Bus
= 300V
I
C
= 60A
R
G
= 5
Inductive Switching (25°C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 60A
R
G
= 5
ns
ns
mJ
ns
Inductive Switching (150°C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 60A
R
G
= 5
mJ
相關(guān)PDF資料
PDF描述
APT60GT60JRDQ3 Thunderbolt IGBT
APT60GU30B POWER MOS 7 IGBT
APT60GU30S POWER MOS 7 IGBT
APT60M90JN N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
APT8067HVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT60GL120JU2 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:ISOTOP? Boost chopper Trench + Field Stop IGBT4 Power module
APT60GL120JU2_10 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:ISOTOP?? Boost chopper Trench Field Stop IGBT4 Power module
APT60GL120JU3 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:ISOTOP Buck chopper Trench + Field Stop IGBT4 Power module
APT60GL120JU3_10 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:ISOTOP Buck chopper Trench + Field Stop IGBT4 Power module
APT60GT60BR 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*