參數(shù)資料
型號(hào)： APT60GF120JRDQ3
廠商： Advanced Power Technology Ltd.
英文描述： FAST IGBT & FRED
中文描述： 快速IGBT
文件頁數(shù)： 4/9頁
文件大?。?/td> 456K
代理商： APT60GF120JRDQ3
0
APT60GF120JRDQ3
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
V
CE
=
800V
R
=
1.0
L = 100μH
E
O
,
t
r
R
t
d
,
FIGURE 15, Switching Energy Losses vs. Gate Resistance
E
O
,
t
f
F
t
d
(
,
FIGURE 16, Switching Energy Losses vs Junction Temperature
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
, GATE RESISTANCE (OHMS)
T
, JUNCTION TEMPERATURE (°C)
R
G
=
1.0
, L
=
100
μ
H, V
CE
=
800V
V
CE
= 800V
T
J
= 25°C
or 125°C
R
= 1.0
L = 100μH
20
40
V
GE
= 15V
T
J
=
25 or 125°C,V
GE
=
15V
60
80
100
120
140
160
20
40
60
80
100
120
140
160
20
40
60
80
100
120
140
160
20
40
60
80
100
120
140
160
20
40
60
80
100
120
140
160
20
40
60
80
100
120
140
160
0
5
10
15
20
0
25
50
75
100
125
R
G
=
1.0
, L
=
100
μ
H, V
CE
=
800V
60
50
40
30
20
10
0
200
180
160
140
120
100
80
60
40
20
0
50
40
30
20
10
0
70
60
50
40
30
20
10
0
T
J
=
125°C, V
GE
=
15V
T
J
=
25°C, V
GE
=
15V
600
500
400
300
200
100
0
140
120
100
80
60
40
20
0
16
14
12
10
8
6
4
2
0
45
40
35
30
25
20
15
10
5
0
V
CE
= 800V
V
GE
= +15V
R
G
= 1.0
T
J
=
125°C
T
J
=
25°C
V
CE
= 800V
V
GE
= +15V
R
G
= 1.0
T
J
=
125°C
T
J
=
25°C
E
on2,
200A
E
off,
200A
E
on2,
100A
E
off,
100A
E
on2,
50A
E
off,
50A
V
CE
= 800V
V
GE
= +15V
T
J
= 125°C
V
CE
= 800V
V
GE
= +15V
R
G
= 1.0
E
on2,
200A
E
off,
200A
E
on2,
100A
E
off,
100A
E
on2,
50A
E
off,
50A
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