- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51268 > APT6041CLL 14 A, 600 V, 0.41 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA PDF資料下載
參數(shù)資料
| 型號： | APT6041CLL |
| 元件分類： | JFETs |
| 英文描述： | 14 A, 600 V, 0.41 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封裝： | HERMETIC SEALED, TO-254, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 86K |
| 代理商： | APT6041CLL |
DYNAMIC CHARACTERISTICS
APT6041CLL
050-7337
Rev
-
3-2003
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS
= 0V, I
S
= -I
D
17A
)
Reverse Recovery Time (I
S
= -I
D
17A
, dl
S
/dt = 100A/s)
Reverse Recovery Charge (I
S
= -I
D
17A
, dl
S
/dt = 100A/s)
Peak Diode Recovery dv/dt 5
UNIT
Amps
Volts
ns
C
V/ns
MIN
TYP
MAX
14
56
1.3
400
6.0
8
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.70
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv/
dt
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 300V
I
D
= 14A @ 25°C
RESISTIVE SWITCHING
V
GS
= 15V
V
DD
= 300V
I
D
= 14A @ 25°C
R
G
= 0.6
INDUCTIVE SWITCHING @ 25°C
V
DD
= 400V, V
GS
= 15V
I
D
= 14A, R
G
= 5
INDUCTIVE SWITCHING @ 125°C
V
DD
= 400V V
GS
= 15V
I
D
= 14A, R
G
= 5
MIN
TYP
MAX
1851
2300
365
550
30
50
43
70
11
14
23
40
918
36
17
26
410
246
55
380
62
UNIT
pF
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 9.80mH, RG = 25, Peak IL = 14A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤
-I
D
14A di
/dt ≤ 700A/s V
R ≤
V
DSS
T
J ≤
150
°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
0.5
0.1
0.3
0.7
0.9
0.05
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT6045BVR | 15 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT6045SVR | 15 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6045SVRG | 15 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6045BVRG | 15 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT6045SVR | 15 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT6045AN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 14.5A I(D) | TO-3 |
| APT6045BN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT6045BNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 19A I(D) | TO-247 |
| APT6045BVFR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:POWER MOS V? FREDFET |
| APT6045BVFRG | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:POWER MOS V? FREDFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。